Dr Markus Behet, Global Market Segment Manager Power Electronics, Dow Corning Corporation Large Diameter SiC & GaN/Si Substrates as Cost-Effective Solutions for Power Electronic Applications As global society seeks new sustainable, high-efficiency energy sources that also reduce dependence on fossil fuels, corporations worldwide are stepping up R&D efforts to address this growing demand with cost-effective, high-performance alternatives. One industry sector is starting to significantly outpace the others; that sector is power electronics. Devices using wide bandgap semiconductors like SiC or GaN are significantly more durable, faster, energy and cost-effective for greater efficiencies over devices made from other semiconductor materials. This conference presentation will discuss in depth the power electronics industry and recent progress for SiC and GaN/Si wafer technologies and what these high-performance semiconductors offer to power electronics manufacturers and global society at large.
A.J. Nadler, General Manager, Research Development & Engineering, RF Micro Devices (RFMD) Gallium Nitride for High Voltage Power Electronics
After over thirty years of silicon device and process evolution, today’s power devices have reached the theoretical performance limits of the basic material. The further improvement to these silicon-based devices is expected to be incremental at best. Today, the best silicon devices used in power electronics switching applications have limitations that waste power and switch too slow.
These
limitations significantly impact both the cost and performance of power conversion systems. To provide further improvements to power conversion, wide-band gap semiconductors such as Gallium Nitride (GaN) provide a path forward to significantly reduce system cost and improve performance in many power conversion applications. The technical and commercial challenges in realizing the benefits of GaN in high voltage power switch applications are considered and reviewed by the authors.
Dr Vijit Sabnis, Vice President Technology, Solar Junction Really High Efficiency Triple-Junction Solar Cells
High-efficiency multijunction solar cells are the engines that drive CPV and space power systems. Solar Junction is the only entity to successfully develop dilute-nitride compound semiconductors suitable for multijunction solar cells. The dilute nitrides, in conjunction with other conventional compound semiconductors, form a suite of bandgap-tunable, lattice-matched materials for full spectral utilization of both terrestrial and extraterrestrial solar radiation. Solar Junction has achieved a world record efficiency of 44% and today delivers the highest-efficiency triple-junction solar cells to the CPV market with median production efficiencies exceeding 42%. In this presentation, we will discuss how Solar Junction’s product and technology roadmaps will help drive CPV’s penetration into the PV market and serve as the foundation for next-generation space power systems.
Dr Rainer Krause, Director Smart Cell Incubator Unit, Soitec PV Chip Development
The paper gives an introduction into CPV cell/wafer development for 4 junction technology using Soitec’s proprietary smart cut technology. It is discussed how to make high efficient CPV cell re-using advanced III-V materials to reduce cost and material use. Making a high performing CPV cell with ideal band gap’s and in a current matching technology. Also it is important to demonstrate the capability to manufacture lattice matching on epi level. Driving cost further down the substrate materials like Germanium has to be replaced by less expensive materials, like silicon etc. The discussion is also about development collaboration and effective R&D management to align such a multi partner approach.
Dr Tudor Williams, Senior Systems Engineer, Mesuro Ltd Improving RF Measurement Time to market and reducing engineering overheads are key factors in ensuring commercial success in today’s competitive markets. This presentation explains how the use of active harmonic load-pull to perform ‘WaveForm Engineering’ can dramatically reduce the time to market and the engineering resource required for the development of high efficiency power amplifiers. The ability to engineer waveforms and to understand their relationship to fundamental circuit theory allows the engineer to design and test the matching circuit prior to committing to expensive prototyping or manufacturing processes, and make scientifically-driven, first-pass designs a reality.
Dr Ertugrul Sönmez, Director Business Development, MicroGaN Addressing Emerging Power Market
Platinum Sponsors
Erwin Ysewijn, VP Sales & Marketing, Azzurro GaN on Si. Large Size High Voltage Wafers Showing Superior Electrical Performance & Volume Production Track Record
Gold Sponsors
Drinks reception sponsored by
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