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process of using eGaN FETs for wireless power transfer. The EPC9111 and EPC9112 utilise the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with greater than 75 percent efficiency.
filtered unregulated DC voltage. The device board comes equipped with two LED’s, one to indicate the power is being received and a second LED, which indicates that the output voltage has reached the maximum and is above 37
V.The device board can also be configured as a half-bridge rectifier that allows for double output voltage operation.
National Research Council of Canada announces GaN design kit
Software gives access to NRC’s GaN electronics fabrication service
Wireless energy transfer systems need high efficiency, low profile, robustness to changing operating conditions and, in some cases, low weight. This means designs should be efficient and able to operate at high switching speeds without a bulky heatsink. Furthermore the design must be able to operate over a wide range of coupling and load variations. The fast switching capability of eGaN FETs, says EPC, is ideal for highly resonant power transfer applications.
The popularity of highly resonant wireless power transfer is increasing rapidly, particularly for applications targeting portable device charging. The end applications are varied and evolving quickly from mobile device charging, to life- extending medical implementations, to safety- critical hazardous environments.
The source board is a A4WP compliant, Zero Voltage Switching (ZVS), Class-D amplifier featuring either the 40V EPC2014 (EPC9111) or the 100 V EPC2007 (EPC9112) eGaN FET. It is configured in an optional half-bridge topology (for single-ended configuration) or default full-bridge topology (for differential configuration), and include the gate driver(s) and oscillator that ensure operation of the system at 6.78MHz. These amplifier boards are available separately as EPC9506 and EPC9507 for evaluation in existing customer systems.
The source coil, as well as the device coil, are Rezence (A4WP) compliant and have been pre- tuned to operate at 6.78MHz. The device board includes a high frequency Schottky diode based full-bridge rectifier and output filter to deliver a
The National Research Council of Canada (NRC) is now offering the second version of its gallium nitride GaN500v2 Design Kit software. Combined with Canada›s only foundry for GaN electronics, the kit will enable industry and academics to create revolutionary technologies and device designs, according to the NRC.
The NRC provides complete fabrication processing from 3in GaN on SiC wafers through to characterisation and wafer dicing. Devices are fabricated with 0.5 micron gate length. Partners can choose full wafer runs (one customer›s designs only) or shared wafer runs, which consolidate demand on three or more fabrication runs per year. The latter service is offered in partnership with CMC Microsystems.
The GaN500v2 Design Kit includes both a design manual and a physical design kit, based on Agilent›s ADS CAD tool. The design manual includes the process description and design rules for all supported devices for the GaN technology and the related foundry services available through the Canadian Photonics Fabrication Centre of the NRC of Canada. The technology is appropriate for, but not limited to, RF and microwave devices.
The minimum ADS CAD bundle required for running the kit includes the ADS core and layout module. The design kit is compatible with ADS 2014 and earlier.
Issue VI 2014
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