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news digest ♦ RF Electronics


described by the company as the first GaN-based full 2D systems (simultaneous air-defence, air- surveillance, and weapon-locating) for 3D AESA multifunction radar.


future 360 sensor coverage, these technologies will increase the defended area and decrease the time to detect, discriminate and engage threats, says Raytheon. GaN-based AESA technologies will also further improve reliability and lower life cycle costs for the Patriot radar.


BeRex Adds New High Performance MESFET Chips


Low phase noise, high linearity MESFETs complement popular line of pHEMTs


BeRex has begun shipping a new family of GaAs MESFET chips, the BCF-series, which addresses the need for low phase noise with high gain and power in applications such as single and multi-stage amplifiers, oscillators, synthesizers, etc. ranging in frequency from DC to 26.5GHz.


“These parts along with our existing pHEMT family of packaged and bare-die FET products go a long ways towards fulfilling the commitment to our clients of becoming their one-stop source for their RF and microwave FET needs”, said Alex Yoo, VP of research and development at BeRex.


The BeRex BCF-series of MESFET chips are suited to both broadband and narrow band applications from DC to 26.5GHz. Typical application requires a high level of OIP3 (Output Third-Order Intercept Point) linearity and a low phase noise that cannot be easily achieved with other technologies.


This BCF-series family consists of seven devices, each is built using a 0.25µm gate length and with a gate width of 200µm, 300µm, 400µm, 600 µm, 800µm, 1200µm or 2400µm, depending on the clients gain and power requirements (up to 1W for the largest 2400µm device).


The BeRex BCF-series chips are are now available in sample and production volumes.


Raytheon demos prototyping of AESA/GaN technologies into Patriot radar


Technology promises 360 coverage, better reliability, and lower life cycle costs


Raytheon has demonstrated successful prototyping of Active Electronically Scanned Array (AESA) and GaN technologies into the US Patriot Air and Missile Defense System radar. In addition to enabling


98 www.compoundsemiconductor.net Issue VI 2014


“GaN-based AESA technologies represent the future of ground-based sensors and will have future application to Raytheon’s entire sensor portfolio,” said Ralph Acaba, vice president of Integrated Air and Missile Defense at Raytheon’s Integrated Defense Systems business.


Raytheon has been developin GaN for 15 years and has invested over $150 million to get this latest technology in the hands of the warfighter faster and at lower cost and risk. Raytheon has demonstrated the maturity of the technology in a number of ways, including exceeding the reliability requirement for insertion into the production of military systems. This maturation of GaN resulted in a Manufacturing Readiness Level (MRL) production capability of “8,” the highest level obtained by any organisation in the defense industry for this technology.


Raytheon is the prime contractor for both domestic and international Patriot Air and Missile Defense Systems and system integrator for Patriot Advanced Capability-3 missiles. The Patriot system is used by 12 nations around the globe.


EPC Introduces A4WP Compliant Wireless Power Transfer Demo Kit


GaN FET evaluation kit for 6.78MHz, 35W wireless power transfer systems


Efficient Power Conversion Corporation (EPC) has announced the availability of a complete demonstration wireless power transfer kit. The 40V (EPC9111) or 100V (EPC9112) wireless kits comprise a source (or amplifier) board, a Class 3 A4WP compliant source (or transmit) coil, and a Category 3 A4WP compliant device (or receiving) board including coil


The system is capable of delivering up to 35W into a DC load while operating at 6.78MHz (the lowest ISM band). The kit simplifies the evaluation


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