This page contains a Flash digital edition of a book.
news digest ♦ Novel Devices


comprise IBM scientists and engineers from Albany and Yorktown, New York; Almaden, California; and Europe.


“Scaling to 7nm and below is a terrific challenge, calling for deep physics competencies in processing nano materials affinities and characteristics. IBM is one of a very few companies who has repeatedly demonstrated this level of science and engineering expertise,” said Richard Doherty, technology research director, The Envisioneering Group.


Beyond 7 nanometers, the challenges dramatically increase, requiring a new kind of material to power systems of the future, and new computing platforms to solve problems that are unsolvable or difficult to solve today, says the company.


British researchers create building blocks for new high-resolution display technology


Phase-change film ‘sandwich’ shows potential for thin, flexible nano-pixel displays


A team led by scientists at Oxford University has shown the possibility of combining optical and electrical control in ultrathin phase-change films to create pixels just a few hundred nanometers across. They think their research, published in this week’s Nature, could pave the way for extremely high-resolution and low-energy thin, flexible displays for applications such as ‘smart’ glasses, synthetic retinas, and foldable screens.


Phase-change materials (materials that can change from an amorphous to a crystalline state) such as the alloy germanium antimony tellurium (GST) have for years been used in optical storage media such as rewritable DVDs. More recently, such materials have been investigated as candidates for the next generation of electrically operated non-volatile memories. In this latest study, the researchers found that by sandwiching a seven nanometer thick layer of GST between two layers of a transparent electrode made from indium tin oxide (ITO) they could use a tiny current to ‘draw’ images within the sandwich ‘stack’. The layers of the GST sandwich are created using a sputtering technique where


158 www.compoundsemiconductor.net Issue VI 2014


a target is bombarded with high-energy particles so that atoms from the target are deposited onto another material as a thin film.


Initially still images were created using an atomic force microscope but the team went on to demonstrate that such tiny ‘stacks’ can be turned into prototype pixel-like devices. These ‘nano- pixels’ - just 300 by 300 nanometres in size - can be electrically switched ‘on and off’ at will, creating the coloured dots that would form the building blocks of an extremely high-resolution display technology.


Whilst the work is still in its early stages, the Oxford team has filed a patent on the discovery with the help of Isis Innovation, Oxford University’s technology commercialisation company. Isis is now discussing the displays with companies who are interested in assessing the technology, and with investors.


“We didn’t set out to invent a new kind of display,” said Harish Bhaskaran of Oxford University’s Department of Materials, who led the research. “We were exploring the relationship between the electrical and optical properties of phase change materials and then had the idea of creating this GST ‘sandwich. We found that not only were we able to create images in the stack but, to our surprise, thinner layers of GST actually gave us better contrast. We also discovered that altering the size of the bottom electrode layer enabled us to change the colour of the image.’


He added: “Because the layers that make up our devices can be deposited as thin films they can be incorporated into very thin flexible materials - we have already demonstrated that the technique works on flexible Mylar sheets around 200 nanometres thick.”


Peiman Hosseini of Oxford University’s Department of Materials, first author of the paper, said: “One of the advantages of our design is that, unlike most


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160