RF Electronics ♦ news digest
The transaction, which has been approved by both companies’ boards of directors, is expected to close by the end of 2014 or early 2015, subject to Peregrine’s stockholders’ approval, regulatory approvals, and other customary closing conditions.
Peregrine will continue with its current business model as a wholly owned subsidiary of Murata.
APC Novacom extends Cree
RF range for Europe Now stocking all devices that do not require EU license, including GaN HEMT die
Specialist UK-based distributor APC Novacom is now stocking all Cree RF devices that do not require an EU license, including GaN HEMT die. It is actively supporting Cree’s European market through both volume distribution and small volume stock for network representatives.
Suited for a wide range of RF communications applications including broadband amplifiers, radar, point-to-point radio, telecoms, and tactical data links, Cree GaN HEMTs provide higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and higher efficiency than Si or GaAs die, says the company. The HEMTS also offer greater power density and wider bandwidths.
Cree RF products now available include: general purpose broadband die, general purpose 28V and 40V broadband GaN HEMTs, 28V and 50V telecom GaN HEMTs, 0.25 micron die, and a variety of GaN HEMTs for satellite communications and L-, S-, X-, and C-Band applications.
Custom MMIC adds new 14 to 18GHz GaN Power Amp
Offers high power, high linearity, and efficiency over 32 percent
Custom MMIC, a US developer of MMICs, has added a 14 to 18 GHz GaN power amplifier in die form, to its expanding product line.
The CMD216 delivers 16 dB of flat gain across the entire 14 to 18 GHz bandwidth, an output 1 dB compression point of +37dBm, and a saturated output power of +38dBm. The CMD216 requires a bias of Vdd = 28 V, 550mA, and Vgg = -3.4 V. Additionally, the amplifier boasts a power added efficiency of 32 percent or greater.
The CMD216 is a fully matched 50ohm matched design and only requires external bypass capacitors to complete the bias circuitry. The die is passivated for increased reliability and moisture protection. The CMD216 is ideally suited for Ku-band communications systems.
Custom MMIC, based in Westford, MA, offers both hands-on design through testing services, and a growing library of system-ready designs. It has experience in GaAs, GaN, SiC, InP, and InGaP HBT and has established relationships with the leading foundries in these technologies. The company specialises in RF through millimeter-wave circuits for satellite communications, radar systems, cellular infrastructure, consumer electronics, VSAT, and point-to-point radio systems.
Issue VI 2014
www.compoundsemiconductor.net 93
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