Power Electronics ♦ news digest
Mitsubishi Electric has launched a transfer-moulded super-mini dual in-line package power factor correction (DIPPFC) module incorporating silicon carbide transistors and diodes, which is expected to help reduce the power consumption and size of home appliances.
GE leads US Consortium to develop next generation SiC materials and processes
New York Power Electronics Manufacturing Consortium to invest over $500 million in the next five years
New York State will partner with over 100 private companies, led by General Electric, in an American venture to develop next generation of SIC materials and processes, Governor Andrew Cuomo announced yesterday. Called the New York Power Electronics Manufacturing Consortium (NY-PEMC), the venture will invest over $500 million in the next five years.
SiC contributes to lower power consumption and compact size. Features of the module include: power loss reduction of about 45 percent compared to silicon products; a SiC schottky barrier diode (SBD) to reduce recovery current power consumption and electromagnetic interference noise; SiC MOSFET achieves maximum 40kHz high-frequency switching and contributes to downsizing of peripheral components, such as reactors and heat sinks; power factor correction (PFC) and driving IC contribute to downsizing by reducing mounting surface area and simplifying wiring.
Mitsubishi Electric commercialised its first DIPIPM transfer-moulded intelligent power module in 1997 and over the years has contributed greatly to miniaturization and energy-savings in inverter systems. The technology has gained increased importance because annual power consumption has become an important index of energy savings in consumer appliances, such as air conditioners.
Development of this DIPPFC module has been partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
The enterprise will be managed through the newly merged SUNY College of Nanoscale Science and Engineering (CNSE)/SUNY Institute of Technology (SUNYIT) campus based in Albany. GE will be a lead partner in the fab, housed at the CNSE Nano Tech complex (pictured above), which will develop and produce low cost, high performance 6in silicon carbide (SiC) wafers.
All NY-PEMC partner companies will have access to state-of-the-art 6in SiC tools and a baseline process flow, contributed by GE, where they can make their own enhancements in preparation for high volume, cost effective manufacturing. University researchers from around the state will also participate in the program. The idea is to use the state’s nanotech facility to attract researchers and private companies to create a high-tech cluster in New York state.
“This partnership will create thousands of new jobs in Upstate New York, tapping into our highly trained workforce and existing centres of high tech research and development,” said Cuomo. “With commitment from our partners, we are advancing
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