news digest ♦ RF Electronics
Cree releases process design kit for GaN on SiC technology
Integrated suite of design and simulation tools for microwave and RF design
Cree has released a process design kit (PDK) that combines the latest version of Agilent Technologies’ Advanced Design System (ADS) software with Cree’s proprietary GaN on SiC process technology parameters and design rules.
Available free of charge, the Cree GaN PDK V4.01 is an integrated front-to-back system that provides microwave and RF design engineers with a comprehensive suite of design and simulation tools that helps accelerate their time to market.
The updated software features expanded layout and modeling options and enhanced rule-checking processes for improved design-to-build accuracy. Specifically, PDK V4.01 adds integrated support for: G50V3 (50V, 0.4µm), G28V4 (28V, 0.25µm), and G40V4 (40V, 0.25µm) device technologies; V3 and V4 passive switch HEMTs; and the Cree standard dielectric crossover.
The software also offers dual design panels - one for V3 and one for V4 - to support streamlined design with either technology, updated bulk resistor layouts and models to reflect current process and design requirements, and updated layout design rule checks (DRCs) to thoroughly and accurately verify requirements. Further, V4.01 corrects many of the inconveniences users noted in the previous PDK release.
TriQuint is first to achieve DoD manufacturing level 9 for RF GaN
Company processes meet full performance, cost and capacity goals
TriQuint Semiconductor has announced that it is the first GaN RF chip manufacturer to achieve the US Department of Defense’s Manufacturing Readiness Level (MRL) 9.
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www.compoundsemiconductor.net Issue VI 2014
The DoD’s Manufacturing Readiness Assessment (MRA) ensures that manufacturing, production and quality assurance can meet operational mission needs. The aim is to provide guidance about the maturity and risk of a given technology. TriQuint demonstrated that its manufacturing processes met full performance, cost and capacity goals, with the capability in place to support full rate production.
To benchmark MRL 9, TriQuint applied the US Air Force Research Laboratory’s rigorous manufacturing readiness assessment tool and criteria to its high frequency, high power GaN production line. TriQuint’s ongoing development of GaN-based devices is leading to smaller, more efficient power amplifiers, typically used for military radar and electronic warfare programs as well as commercial wireless communications and infrastructure.
“TriQuint recently completed its Defense Production Act Title III GaN on silicon carbide (SiC) program and now we’ve proven that we provide the GaN maturity needed to support full-rate production programs,” said vice president and general manager James Klein, Infrastructure and Defense Products.
Key to the company’s assessment, TriQuint has shipped more than 170,000 0.25µm GaN power amplifier devices in support of an ongoing international radar production program. During phased array radar field testing, approximately 15,000 devices have accumulated more than 3.67 million device hours, with no reported device failures. TriQuint continues to demonstrate industry- leading reliability with a mean time to failure (MTTF) of greater than 70 million hours at 200 degrees Celsius, substantially greater than the industry standard of 1 million hours MTTF.
Anadigics ship volumes of
GaN power doubler Surface mount chip suits new DOCSIS 3.1 CATV equipmenrt
Anadigics has announced that it is shipping production volumes of its ACA2429 GaN power doubler surface mount IC in support of new DOCSIS 3.1 CATV infrastructure equipment.
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