NEWS REVIEW
First Solar surpass CdTe thin film efficiency again
FIRST SOLAR has announced it has set a world record for cadmium-telluride (CdTe) photovoltaic (PV) research cell conversion efficiency, achieving 21 percent efficiency certified at the Newport Corporation’s Technology and Applications Centre (TAC) PV Lab. The record-setting cell was constructed at the company’s Perrysburg, Ohio manufacturing factory and Research & Development Centre, using processes and materials designed for commercial- scale manufacturing.
The record has been documented in the US Department of Energy’s National Renewable Energy Laboratory (NREL) “Best Research Cell Efficiencies” reference chart.
This certified result bests the previous CdTe record of 20.4 percent conversion efficiency, which was set by First Solar in February of 2014, and represents the seventh substantial update to CdTe record efficiency since 2011. The achievement also places First Solar’s CdTe research cell efficiency above copper indium gallium diselenide based solar cells (CIGS) at 20.9 percent, and well above multicrystalline silicon (mSi), which peaked at 20.4 percent in 2004.
“We have just begun to reveal the true unrealized potential of CdTe PV,” said Raffi Garabedian, First Solar’s Chief Technology Officer. “Our Advanced Research team continues to deliver extraordinary results by creating practical devices capable of commercial scale production. Not only have we have now demonstrated the highest single junction thin film cell on record, but just as important, our record cells are based on the same scalable manufacturing processes and commodity materials that we have proven through years of volume production.”
Garabedian noted that while competing technologies are using increasingly costly materials and cell processes in order to deliver moderate performance gains, First Solar is establishing a rapid path to industry-leading energy densities, while simultaneously improving manufacturing metrics.
GaAs IC Market to reach $8 billion in 2017
A NEW MARKET research report ‘The GaAs IC Market’ by Information Network forecasts that the GaAs IC market will reach $8 billion in 2017.
The most important driver of the GaAs RF IC market is power amplifiers (PAs) and switches in the front-end of the handsets. 3G handsets often contain up to five PAs, and GaAs makes up 100 percent of the market, which is close to $5 billion.
According to the report, the number of PAs per handset is growing because of: complex 3G systems, global roaming support, and data roaming support.
Pricing for PAs has increased from $0.80 per handset to $2.90 currently and is projected to increase to greater than $3.50 once Long Term Evolution (LTE) and Advanced Wireless Services (AWS) spectrum emerge in advanced handsets in the marketplace.
“Our significant investment in development of CdTe thin-film technology has enabled a rapid rate of improvement and gives us tremendous confidence in the future,” said Markus Gloeckler, First Solar Vice President for Advanced Research. “We have made outstanding improvements in all aspects of our thin-film solar cells and are aggressively pursuing the commercialization of these advanced technologies in our product.”
At an analyst briefing last March, First Solar presented a technology roadmap anticipating a 22 percent research cell efficiency milestone in 2015. This announcement indicates First Solar is steadily tracking to achieve that goal ahead of schedule.
First Solar has continued to transfer its success in the R&D lab into its commercially produced modules, increasing its average production module efficiency to 14 percent in the second quarter of 2014, up 0.5 percent from the first quarter of the year, and up 0.7 percent from FY2013. The company’s lead line was producing modules with 14.1 percent average efficiency at the end of the second quarter of 2014.
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www.compoundsemiconductor.net Issue VI 2014 Copyright Compound Semiconductor
While industrialised countries are using 3G networks, today’s world is a mixture of 2/2.5G and 3G networks, the heavy majority of subscribers are actually on 2G-based networks - and predicted to remain so for a number of years.
Between 70 to 80 percent of Skyworks’ and RF Micro Device’s GaAs business is in PAs. 2G handsets contain one PA, so it represents a sizable market.
Because they aren’t as technologically advanced as 3G cell phones, particularly smartphones, silicon is making inroads in the GaAs domain. For 2013, only 90 percent of PAs were made in GaAs, 5 percent in silicon CMOS, and 5 percent in silicon LDMOS.
In the article “Understanding imperfections in GaN HEMTs”, it was stated that Petra Specht was at the University of Santa Barbara, California.
This is incorrect: Specht is at The University of Berkeley, California.
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