NEWS REVIEW
Cars playing increasing role in optoelectronics sector
WITH CAR OWNERSHIP increasing in less economically developed regions and vehicles becoming more advanced, the automotive sector is playing an increasingly important role across all the major opotoelectronic component product types, according to a research by Stewart Shinkwin at IHS Inc.
Following a new European Union Directive 2008/89/EC, which required after 2011 all new models of car to be fi tted with daylight running lamps, adoption of LEDs in automotive exteriors has signifi cantly increased. Due to the long lifetime and energy effi cient nature of LEDs, penetration in this area of the market was high and has helped drive adoption of LEDs.
Use of LEDs specifi cally in headlamp units is still relatively low, with only 2 percent of car headlamps using LEDs in 2013 according to fi gures from IHS Automotive. As their popularity, performance and effi ciency grow, this is set to increase to 17 percent in 2019. This will bring signifi cant growth to the LED market, with packaged LEDs for automotive exterior lighting set to grow at a CAGR of over 8 percent.
MACOM announces highest power GaN L-Band Radar HEMT MACOM has introduced a new GaN
on SiC HEMT power transistor which it claims offers the highest peak power in the industry for a single- ended power transistor optimised for pulsed L-Band radar.
Technological advancement in the automotive industry has increased the adoption of infrared components, with a wide range of automotive applications including auto headlamps, automatic windscreen wipers, gesture control, and night vision displays.
Infrared revenues in this sector are forecast to increase from $118 million in 2013 to $207 million in 2019. It is unlikely, says IHS, that these technologies will become standard features in lower cost models; however, their penetration in mid-tier models is constantly increasing.
The increase in sales of hybrid electric vehicles (HEV) and full electric vehicles (EV) is also promoting growth in the optocoupler market.
Australian researchers pioneer graphene process using epitaxial SiC
RESEARCHERS at Griffi th University in Australia are fabricating graphene from silicon carbide on silicon wafers using a process they say is scalable to 300mm mass production wafers.
Dr Francesca Iacopi’s team are using the Australian National Fabrication Facility’s (ANFF) Silicon Carbide Epitaxial reactor located at the Queensland Micro and Nanotechnology Centre at Griffi th. They have combined the production of low cost silicon carbide wafers (made through the deposition of a high quality SiC layer onto low cost Si wafers), with the ability to pattern and etch this material using a plasma and fi nally to use novel low-temperature technology to synthesise graphene on only the required pattern. The researchers say that the
combination of a crystalline SiC core with a surface graphene coating is ideal for sensing devices. The exceptional mechanical properties of SiC (which is the second hardest material after diamonds) can be further enhanced by graphene, resulting in excellent fracture strength. Also graphene offers a wealth of surface chemistry approaches for targeting specifi c ions and molecules. This year, the team produced SiC micro- resonators by replacing the traditional metals with a one molecule thick, transparent, highly conductive graphene layer. This work was detailed in a paper called ‘Microresonators with Q-factors over a million from highly stressed epitaxial silicon carbide on silicon’ by A.R Kermany et al in Applied Physics Letters 104, 081901 (2014).
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www.compoundsemiconductor.net Issue VI 2014 Copyright Compound Semiconductor
The MAGX-001214-650L00 guarantees 650W of peak power with a typical 19.5 dB of gain and 60 percent effi ciency. The device also has a high breakdown voltage which allow customers reliable and stable operation at 50V under more extreme load mismatch conditions.
The device is assembled in a ceramic fl ange package and has undergone MACOM’s rigorous qualifi cation and reliability testing.
“The MAGX-001214-650L00 is a clear leader in high pulsed power GaN technology with guaranteed 650 W of peak output power combined with excellent gain, effi ciency and reliable performance,” said Paul Beasly, product manager.
“The device is an ideal candidate for customers looking to combine two power transistors and realise over 1,000 W of peak power in a single pallet for next generation L-Band radar systems that require increased performance in smaller footprints.”
Operating between the 1200 to 1400 MHz Frequency range, the MAGX- 001214-650L00 has a mean time to failure (MTTF) of 5.3 x106 hours.
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