Power Electronics ♦ news digest
is to lead in green energy. The inverter technology being developed has broad applications beyond solar conversion and we anticipate these energy efficient applications will find usage across various Tata companies.”
“By designing our solar inverter product family with Transphorm’s industry-leading and qualified EZ- GaN platform, Tata Power Solar will provide the Indian energy sector with a compact and higher efficiency PV Inverter as well as a roadmap of higher performance and smaller form factor solar PV power,” said Dr. Arul Shanmugasundram, EVP Projects and CTO for Tata Power Solar. “This world-leading product family will accelerate India’s adoption of solar energy, enabling the goal of using renewables to power 20 percent of India’s energy needs by 2020.”
“Tata’s partnership with Transphorm is a testament to continued validation of Transphorm’s undisputed leadership in addressing global power conversion needs,” said Umesh Mishra, chairman, Transphorm. “We look forward to working with TATA to bring energy savings directly to enterprises and consumers.”
According to Transphorm, the company’s access to automotive class, high volume foundry manufacturing through its partnership with Fujitsu enables it to meet growing demand from global customers adopting energy-saving GaN power conversion products.
highest power density while undergoing testing for 100 hours.
IEEE to host Webinar by EPC on GaN FETs
GaN expert Johan Strydom to present on envelope tracking
IEEE Power Electronics Society (PELS) will offer a webinar discussing the contribution of GaN power transistors to meet the demanding system bandwidth requirements of envelope tracking power circuit design and applications.
Presented by Johan Strydom, an expert on the subject from the company Efficient Power Conversion Corporation (EPC)).
Ammono cuts prices for Google’s Little Box Challenge 50 percent off GaN substrates for participants
Ammono is reducing GaN substrate prices by 50 percent for participants of ‘The Little Box Challenge’, a competition to build a much smaller power inverter, with a $1M prize launched by Google and the IEEE last month.
The use of wide bandgap semiconductors, such as GaN and SiC, which allow higher power densities, is one way for achieving the miniaturisation of inverters.
The winning device will be the one that achieves the Issue VI 2014
www.compoundsemiconductor.net 115
Discrete GaN power devices can offer superior hard-switching performance to MOSFETs and are considered important in the development of switching converters for envelope tracking. In this seminar, Strydom will present the latest family of high frequency enhancement-mode GaN transistors on silicon (eGaN FETs) in a few multi-megahertz buck converters. He will also discuss different system-level parasitics and evaluate their impact based on the experimental results.
Johan Strydom, EPC’s vice president of applications engineering, is widely published in the industry, including being co-author of GaN Transistors for Efficient Power Conversion, the first textbook on the design and applications of GaN transistors.
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