news digest ♦ Equipment and Materials


semiconductors are finding wide application in LEDs; high speed and high power devices; lasers; sensors; and IR-visible-UVs.


The report ‹Compound Semiconductor Market by Type (III-V, II-VI, IV-IV, sapphire), Deposition Technology (CVD, MBE, HVPE, Ammonothermal, MOVPE, LPE, ALD), Product (Power, Opto- electronic), Application, and Geography-2013-2020’› covers the overall compound semiconductor market segmented into five major segments: compound semiconductor types, deposition technology, products, application, and geography.


MarketsandMarkets is a global market research and consulting company based in the US.


Equipment and Materials


MELCO begins production


with new Aixtron MOCVD tool Tool to be used for GaN-on-Si PAs for mobile communication basestations


Mitsubishi Electric Corporation (MELCO)


Macom Expands GaN Portfolio with 90W Avionics Power Module


Fully-matched, two-stage GaN module provides true surface mount solution


Macom has announced the newest entry in its portfolio of GaN in plastic power module products. Optimised for pulsed avionics applications in the 960 to 1215MHz band, Macom’s new two-stage, fully matched GaN surface mount power module scales to peak pulse power levels of 100W in a 14 x 24 mm package size.


Under pulsed conditions, these modules deliver output power greater than 90W, with 30dB typical associated power gain and 60 percent typical power added efficiency. They support 50V operation and up to 3ms pulse width/duration for improved signal flexibility.


Delivering benefits in size, weight and power while enabling high volume manufacturing efficiency, Macom’s new GaN power modules feature a Land Grid Array (LGA) pattern for enhanced thermal flow and true SMT assembly and do not require copper coining or complicated thermal management techniques on the system PCB.


has begun operations with Aixtron’s AIX 2800G4 HT Planetary Reactor system. The 11x4-inch wafer configuration tool will be used mainly for the development and volume production of high efficiency GaN-on-Si power amplifiers for mobile communication base stations.


MELCO’s decision to buy the G4 for production of high efficiency power amplifiers is based on the positive experience with Aixtron’s previous G3 MOCVD tool generation. As the Planetary Reactor provides system flexibility and a maximum production yield through superior material uniformity combined with a low wafer bow, the company looks forward to using it in volume production.


Frank Wischmeyer, vice president power electronics of Aixtron, says: “Gallium Nitride-on-Silicon technology is becoming the technology of choice for manufacturers of power electronics as it offers high performance and cost effective manufacturing processes on 4in, 6in and 200 mm Silicon. We are very pleased to enable MELCO to produce devices like monolithic high-efficiency power amplifiers or discrete HEMTs.”


GaN-based components enable higher power densities at higher frequencies with potential applications that include satellite communication and radar, in addition to mobile phone network base stations.


Mitsubishi Electric Corporation (MELCO) is a Japanese multinational electronics and electrical equipment manufacturing company headquartered in Tokyo. Established in 1921, it is one of the core companies of the Mitsubishi Group generating revenues of $37,94bn in 2013.


126 www.compoundsemiconductor.net Issue VI 2014


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