Equipment and Materials ♦ news digest ClassOne’s new Electroplater
gets first customer Solstice system goes to Washington Nanofabrication Facility
looking for,” said Michael Khbeis, associate director of the WNF. “It’s a very flexible development tool with the capabilities we need to serve our customers and perform a range of advanced processes - Through Silicon Via (TSV) plating and MEMS are particularly important to us. Plus, the LT price was within our budget, so we made our purchase commitment right there at the show.”
Japanese lab creates new GaN substrate
SCAM substrate better than sapphire for crystal defects
ClassOne Technology has sold its first production unit of the new Solstice electroplating systems, launched at SEMICON, to the Washington Nanofabrication Facility (WNF) at the University of Washington, USA.
The WNF is a national user centre that is a part of the National Nanotechnology Infrastructure Network (NNIN). It is a full service micro and nanotechnology user facility, providing 15,000 sq ft of laboratories, cleanrooms, and user spaces focused on enabling basic and applied research, advanced R&D and prototype production.
Founded last year, ClassOne Technology produces wet processing tools specifically aimed at the needs of cost-conscious smaller-substrate users in emerging technologies such as MEMS, LEDs, power devices, RF communications, interposers, photonics and microfluidics.
To date, ClassOne has announced two Solstice models: The semi-automated Solstice LT features 1 or 2 chambers for development and pilot lines and starts at $350k. The fully-automated, cassette-to- cassette Solstice S8 provides up to eight process chambers, throughputs up to 75 wph and starts at $1M - which is less than half the cost of equivalent 300mm tools from the large manufacturers.
“The Solstice LT was exactly what we’ve been Issue VI 2014
www.compoundsemiconductor.net 127
Fukuda Crystal Laboratory, based in Sendai, Japan, has created 2inch-diameter samples of ScAlMgO4 (scandium aluminum magnesium oxide) crystal, also known as SCAM. The idea is to replace sapphire in GaN-based LEDs and laser diodes by reducing crystal defects for GaN- based semiconductors grown on it. As a result, it is expected to boost brightness of GaN-based LEDs.
A research group led by Takashi Matsuoka, professor at the Institute for Materials Research at Tohoku University (also in Sendai), formed an LED structure by using the prototype crystal as a base for stacking GaN-based semiconductor layers, the crystal did indeed improve the crystal structure of the GaN.
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