RF Electronics ♦ news digest
at a compound annual growth rate of 34.7 percent. The global connected car market is driven by safety and security services along with gaming, entertainment, traffic information, weather and location services.
Novati gets ‘trusted foundry’ stamp for US defence applications
One of only nine fabs to win DoD accreditation
problems that require innovative materials, combinations of heterogeneous devices and high- risk processing techniques come to Novati. We regularly help develop products from concepts that have never been built before. The Trusted Foundry accreditation reflects our focus and strong commitment to supporting aerospace and defense contractors.”
The Trusted Foundry program, administred by the Defense Microelectronics Activity (DMEA) organisation on behalf of the DoD, ensures that the US government has guaranteed access to specialised, high-performance components.
MACOM Announces Highest Power GaN L-Band Radar HEMT
Novati Technologies, a developer of photonics, MEMS, 2.5D/3D, III-V-on-silicon and nanotechnology products, has announced that its wafer fab in Austin, Texas has been accredited by the US Department of Defense (DoD) as a Category 1A Trusted Foundry.
The DoD accreditation distinguishes Novati as a trusted manufacturer of integrated circuits for US aerospace and defence applications. Category 1A has been granted to only nine CMOS fabs that exhibit the highest levels of process integrity and protection.
Novati builds MEMS, sensors, actuators, photonic and electro-optic devices, Infrared (IR) detectors, wide bandgap electronics, non-volatile memory, power semiconductors, RF devices and a range of 2.5D/3D devices for aerospace and defence customers.
“Today’s security applications for DoD demand suppliers who can meet the most rigorous requirements for utilising non-traditional elements and support low-volume manufacturing,” said David Anderson, president and CEO for Novati. “We’ve proven that customers with really tough
50W GaN on SiC transistor targets 1.2 to 1.4 GHzMacom has introduced a new GaN on SiC HEMT power transistor which it claims offers the highest peak power in the industry for a single- ended power transistor optimised for pulsed L-Band radar.
The MAGX-001214-650L00 guarantees 650W of peak power with a typical 19.5 dB of gain and 60 percent efficiency. The device also has a high breakdown voltage which allow customers reliable and stable operation at 50V under more extreme load mismatch conditions. The device is assembled in a ceramic flange package and has undergone MACOM’s rigorous qualification and reliability testing.
“The MAGX-001214-650L00 is a clear leader in high pulsed power GaN technology with guaranteed 650 W of peak output power combined with excellent gain, efficiency and reliable performance,” said Paul Beasly, product manager. “The device is an ideal candidate for customers looking to combine two power transistors and realise over 1,000 W of peak power in a single pallet for next generation L-Band radar systems that require increased performance in smaller footprints.”
Operating between the 1200 to 1400 MHz Frequency range, the MAGX-001214-650L00 has a mean time to failure (MTTF) of 5.3 x106
hours. Issue VI 2014
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