NEWS ANALYSIS


manufacturers have grown the device on bulk GaN or bulk SiC, rather than a cheap silicon substrate.


“GaN will only really compete with SiC at these higher voltages when the cost of GaN bulk crystals becomes competitive with SiC bulk crystals, but today GaN crystals are nowhere near that level,” highlights Lidow.


And while M/A-COM, for example, has demonstrated high voltage, 1.5 kV GaN- on-silicon FETs, Lidow asserts: “I suspect


that SiC will be the dominant growth engine in 900 V and above applications for the next decade or so, with GaN being dominant in 600 V and below.”


So where next for EPC? According to Lidow, the company is still discovering applications for its 30 V to 200 V devices he couldn’t have imagined a few years ago. The relatively new markets of envelope tracking in base stations, wireless power and LIDAR applications currently make up around half of his company’s business and for him, this is


just the beginning.


“The question I ask myself is where does the market go from here,” he says. “Will GaN take over analogue ICs? Yes, I think there is a very high probability of that. Can you make digital CMOS with GaN? The answer here is probably yes.”


“You’ll soon see the very earliest forms of integrated circuit coming from us as well as higher frequency devices,” he says, addding: “We intend to cover the entire $13 billion transistor market.”


Copyright Compound Semiconductor Issue VI 2014 www.compoundsemiconductor.net 21


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