news digest ♦ Telecoms
introduced a pair of 20W Ka-Band SPDT switch DIE for high-performance VSAT, radar, and communication systems.
The cost-effective industry solutions are suited for high frequency and high power applications and incorporate new AlGaAs diode high power absorptive and reflective switches.
Both the MASW-011036 and MASW-010646 are highly linear SPDT switches, developed specifically for Ka- Band applications that require up to 20 W of linear power handling, while maintaining low insertion loss and high isolation. MACOM says these switches boast the industry’s lowest loss while providing customers an efficient and easy-to-implement die solution.
passivated with SiN and have an added polymer layer providing scratch protection. The protective coating also shields the DIE during handling and assembly processes.
“Ka-Band VSAT and radar system designers are challenged to reduce the size, weight, and cost of next generation system designs, while meeting new requirements of higher power, efficiency and reliability,” says Kevin Harrington, MACOM, A&D Product Line Manager. “MACOM’s High Power Ka-Band AlGaAs switches simplify the system designers RF Line-up by offering low loss, high isolation solutions in a small sized solution.”
Samples of both MASW-011036 and MASW-010646 DIE are available upon request.
IEEE conference to shine a light on photonics
The MASW-011036 SPDT Switch DIE
The MASW-011036 is an absorptive SPDT Switch DIE operating from 26 GHz to 40 GHz and operates up to 20 Watts of incident power. With a fast switching speed of 8nS and low Insertion Loss of 0.7dB, the power handling of the off-state port can handle up to 26dBm of power with better than 10dB return loss - improving system performance. For simplicity, the design incorporates the RF Bias Network and DC Blocks on the DIE which reduces the bill of materials requirements in the system line-up.
The 5 day conference will feature talks and presentations discussing many topics, including those using compound semiconductors. These will include InP telecoms, InGaAs imaging systems and photovoltaics
The unveiling of breakthroughs in photonics, the use of light waves in electronic systems as opposed to electrical currents and voltages, will top the agenda at the annual IEEE Photonics Conference (IPC-2013).
Formerly known as the IEEE LEOS Annual Meeting, the conference in Seattle, taking place from September 8th to 12th, will feature the world’s leading technologists in the field.
Some 600 scientists, engineers and technical managers will gather at the Hyatt Regency Bellevue Hotel for an IPC-2013 program of invited talks, paper presentations, panel sessions, special symposia, networking opportunities, and a product showcase.
The MASW-010646 SPDT Switch DIE
The MASW-010646 is a reflective SPDT Switch DIE operating from 28 GHz to 40GHz and operates up to 20 Watts of incident power. With a fast switching speed of 8nS and low Insertion Loss of 0.6dB, the device also incorporates the RF Bias Network and DC Blocks onto the DIE.
Both devices have full backside metallisation to easily mount to PCBs using standard conductive epoxy in manufacturing for the 4mm thick DIE. Both DIE are fully
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www.compoundsemiconductor.net July 2013
Since 1988, the IEEE Photonics Conference and its predecessor the IEEE LEOS Annual Meeting have been one of the premier autumn gatherings for the presentation and discussion of research in photonics technologies and applications.
These include lasers, biophotonics, displays, photodetectors, sensors, imaging systems, integrated optics, photovoltaics, optoelectronics, interconnects, microwave and nanophotonic devices and systems, non- linear and ultrafast optics, optical fibre communications, planar waveguide technology and optoelectronic materials.
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