news digest ♦ Telecoms to support C-Band RADAR applications.
The new device operates in the 5.2 GHz1 to 5.4 GHz range. RF performance specifications include output power of 53.0dBm (typ.) with 43dBm input power, power gain of 10.0dB2 (typ.) and drain current of 2.4Amps2 (typ.) with pulse width of 200 µsec (nom.) and duty ratio of 10 percent (nom.). The device has a power efficiency of 40 percent and comes in a 7-AA06A package.
This device enables increased output power and helps reduce size and weight in solid state power amplifiers (SSPA) for RADAR applications.
“Although this is our initial entry into this specific type of C-Band GaN HEMTs, Toshiba has long been a leading manufacturer of solid state power amplifiers for RADAR applications in the Japanese domestic and international markets,” says Homayoun Ghani, business development manager, microwave devices, for TAEC’s Discrete Business Unit. “Our GaN HEMTs have been one of the technological foundations helping to accelerate the modernisation of RADAR technology from a tube-based to a solid-state-based design. In fact, solid-state weather RADAR systems using Toshiba devices are currently in operation at several sites in Japan.”
Samples of the Toshiba C-Band GaN HEMT will be available in Q3 of 2013.
Toshiba C-band GaN HEMTs support SATCOM market
The gallium nitride module are optimised for high power, gain and efficiency to support extended C-band applications
Toshiba America Electronic Components, Inc. (TAEC) and its parent company, Toshiba Corp., have announced the expansion of their GaN HEMT line-up.
TAEC has added three new devices optimised to support extended C-Band SATCOM applications.
The TGI5867 broadband GaN HEMT family is targeted to block up convertors (BUCs) and solid state power amplifiers (SSPAs).
Toshiba TGI5867 family
Toshiba’s new TGI5867 family supports extended C-Band (5.85 to 6.725 GHz frequency range) satellite communications, enabling satellite operators to offer more service and data traffic capacity to the market.
The TGI5867 GaN HEMT family operates in the 5.85 to 6.725 GHz range, with available power ratings of 25W, 50W and 100W. The TGI5867-100L has an output power at 100W or 50.0dBm2 (typ.) with an input power of 20W or 43dBm (nom.), linear gain at 11.0dB2 (typ.) and power added efficiency of 38 percent2. The TGI5867-50L and 25L have an output power at 50W2 (typ.) and at 25W2 (typ.), linear gain at 13.0dB (typ.) and power added efficiency of 40 and 45 percent, respectively.
“The expansion of our GaN HEMT product family brings high gain, high power and broadband features that help designers build energy-efficient SSPAs and BUCs,” notes Homayoun Ghani, business development manager, microwave devices, for TAEC’s Discrete Business Unit.
Ghani continues, “By adding the 100W, 50W and 25W line-up to our GaN HEMT product family, Toshiba is now able to provide a full GaN HEMT-base SSPA design solution for extended C-Band SATCOM applications. This solution will help microwave designers eliminate multiple power supply rails and reduce the number of parts in their overall system.”
Samples of the Toshiba extended C-Band GaN HEMT family will be available in Q3 of 2013.
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www.compoundsemiconductor.net July 2013
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