Telecoms ♦ news digest
Since its introduction in 1995, IBM’s SiGe semiconductor technology has helped spur a revolution in radio frequency (RF) performance, enabling engineers to develop breakthrough devices such as satellite global positioning systems, WiFi radios and high speed optical links.
Image showing a 3D rendering of a stable manganese gallium nitride surface structure (Credit: A.R. Smith, Ohio University)
Valeria Ferrari of the Centro Atómico Constituyentes points out her group performed quantum mechanical simulations to test which model structures have the lowest energy, which suggested both the trimer structure and the manganese-nitrogen bonded structure.
Now that scientists have shown that they can create a stable structure with these materials, they will investigate whether it has the magnetic properties at room temperature necessary to function as a spintronic material.
Further details of this work have been published in the paper, “ Manganese 3×3 and √3×√3-R30∘structures and structural phase transition on w-GaN(0001̅ ) studied by scanning tunneling microscopy and first-principles theory,» by A. V. Chinchore et al in Physical Review B, 87, 165426 (2013).
DOI: 10.1103/PhysRevB.87.165426
This research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering (STM studies of nanoscale spintronic nitride systems), the National Science Foundation (advancing nanospintronics through international collaboration), CONICET, ANPCyT and Spanish MICINN. The Ohio Supercomputing Centre provided computer time.
IBM SiGe wireless chips clear data bottlenecks
The company’s latest silicon-germanium chip-making process enables data to flow through network backbones in applications such as Wi-Fi, LTE cellular, wireless backhaul and high speed optical communications
IBM has launched the fifth generation of semiconductor technology specialised for high performance communications.
IBM’s new “9HP” SiGe technology continues to put advanced capability in the hands of engineers who design chips for LTE cellular base stations, millimetre- wave wireless communication links, and next generation short and long-haul optical communications. Outside of communications, 9HP performance will advance the state of the art in other applications such as high- performance test equipment, automotive radar and security imaging.
“Silicon-germanium is one of the key technologies that have enabled wireless operators to keep up with the explosive growth in data traffic generated from mobile handsets,” says David Harame, IBM Fellow. “Before SiGe, the high-performance chips used in base stations and optical links were built using expensive, esoteric processes. SiGe provides the necessary performance as well as integration and cost savings via its CMOS base.”
Over the years, a number of leading technology companies have come to rely on the benefits and advantages of SiGe, working closely with IBM to develop and refine new versions of the chip-making process. IBM believes that open collaboration among companies will drive future breakthrough innovation in semiconductors.
“As early adopters of IBM’s SiGe technology, Semtech has consistently pushed the envelope on what can be achieved in high-speed wired and wireless communications systems and in high performance analogue devices,” notes Charles Harper, Senior Vice President of Semtech’s Systems Innovation Group. “With today’s technology, Semtech is a leader in 40Gbps and 100Gbps Communications Systems and with IBM’s latest SiGe technology we believe we can emerge as a leader in several new analogue segments where performance, integration and power are critical requirements.”
“Our long collaboration with IBM on SiGe technology has enabled Tektronix to break new barriers on what can be achieved in high-fidelity, high-bandwidth oscilloscopes,” continues Kevin Ilcisin, chief technology officer, Tektronix. “We utilised IBM’s SiGe 9HP for our patent-pending asynchronous interleaving approach, and expect to break new ground by providing customers bandwidth capabilities of 70 GHz and beyond while significantly improving our signal-to-noise ratio.”
IBM says 9HP will be the first SiGe technology in the industry featuring the density of 90nm CMOS which will enable the highest level of integration in a fully
July 2013
www.compoundsemiconductor.net 103
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