LEDs ♦ news digest
The NPT2000 Series discrete HEMT devices support power levels of 12, 25, 50 and 100W and are available in both plastic and ceramic packages. Targeting defence and high volume commercial markets, the NPT2000 Series discrete HEMT devices address the competing requirements of lower cost and higher performance.
Monolithically integrated LED and HEMT structure on the same GaN chip. The device is seen here with the LED off (left) and with the LED on (right)
“Just as the integration of many silicon devices in a single chip - integrated circuits - has enabled powerful compact computers and a wide range of smart device technology, the LEIC will play a pivotal role in cost- effective monolithic integration of electronics and LED technology for new smart lighting applications and more efficient LED lighting systems,” Chow says.
“This new study, and the device we have created, is just the tip of the iceberg,” adds Smart Lighting ERC Director Robert Karlicek, a co-author of the study and ECSE professor at Rensselaer. “LEICs will result in even higher energy efficiency of LED lighting systems. But what will be even more exciting are the new devices, new applications, and new breakthroughs enabled by LEICs - they will truly usher in the era of smart lighting.”
This work is described in detail in the paper, “Monolithic integration of light-emitting diodes and power metal- oxide semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate,” by Z. Li et al in Applied Physics Letters, 102, 192107 (2013).
http://dx.doi. org/10.1063/1.4807125
This research was funded by the National Science Foundation through the Smart Lighting ERC, with additional support from New York state though Empire State Development’s Division of Science, Technology and Innovation (NYSTAR).
Nitronex GaN-on-Si power transistors come in many packages
Addition of both ceramic and plastic packaged 48V power transistors to its industry-standard packaged devices have extended capabilities in the defence and high volume commercial markets
Nitronex has developed a family of products based on a new 48V GaN-on-silicon process technology.
NPT2010 device in AC360 ceramic package
The new family of products includes the NPT2010 and NPT2020 with 100W and 50W of output power
July 2013
www.compoundsemiconductor.net 157
“Nitronex is pleased to announce our new 48 Volt product line. These products provide higher gain, higher efficiency, and wider bandwidths for defence and commercial applications,” says Greg Baker, president and CEO at Nitronex.
“We see many interesting opportunities with our core customer and market base with the 48V ceramic package offering, and even more opportunities with the lower-cost plastic package line. Our thermally-enhanced plastic package offering will allow us to be very price competitive in new commercial markets for GaN such as land mobile radio and small-cell base stations,” continues Baker.
The development of the NPT2000 Series 48V discrete HEMT product family was the culmination of three significant efforts.
The first was iterative design improvements based on the firm’s 28V product line enhancing ruggedness, thermal performance and breakdown voltage. The second was an expanded product offering by including low cost, easy to use plastic packages for all devices, from the lowest to highest power. Finally, Nitronex conducted extensive reliability testing in qualifying the new 48V operating voltage.
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