NEWS REVIEW
Plessey unleashes 350mW 6 inch GaN-On-Si LEDs
PLESSEY has announced that samples of its 350mW LED product (p/n PLB010350) are now available.
These lighting products are manufactured on Plessey’s 6 inch MAGIC (Manufactured on GaN I/C) line at its Plymouth, England facility.
These new LED products are aimed at a variety of solid state lighting and entertainment-type lighting products including accent lighting, wall washing, wall grazing, strip-lighting and a variety of pulse lighting applications.
Barry Dennington, Plessey’s COO, says, “The MAGIC LED product range is expanding in both light output and efficacy. The PLB010350 is our first, high current device operating at anywhere from 350mA through to 2A in pulse applications. We have also been able to demonstrate the versatility and the potential of the Plessey GaN on silicon technology by constructing an LED with a relatively large die area.”
“This new 350mW product demonstrates the inherent flexibility we have for the manufacture of LEDs with a 6-inch GaN on silicon substrate in an integrated circuit manufacturing line. We are seeing continual improvements in output efficiencies in the lab which means we will continue to launch new products in line with our product release plan,” continues Dennington.
It is forecasted that LEDs and the associated solid state lighting solutions are due to become the dominant form of lighting in all forms in within the next five years. Solid state lighting is an energy efficient eco-friendly technology that will
save billions of tons of carbon emissions when fully implemented. And there are also no recycling issues that fluorescent lighting poses with mercury content.
The use of Plessey’s MAGIC GaN line using standard semiconductor manufacturing processing, provides yield entitlements of greater than 95 percent and fast processing times providing a significant cost advantage over standard LEDs of similar quality. The 6 inch wafers are grown on an Aixtron CRIUS II reactor.
Plessey announced the first commercially available GaN on large diameter silicon LEDs in April 2013.
Europium and magnesium co-doping creates powerful red GaN LEDs
EUROPIUM (Eu) doped nitride semiconductors show potential for realisation of novel optical devices, such as a low threshold lasers and single photon emitters, due to their sharp line and high efficiency emission.
However, not all the europium ions in semiconductor are incorporated in optically active sites that can be excited through the GaN host. Therefore, it is important to develop methods to selectively incorporate europium ions in higher-efficiency optical sites.
Hiroto Sekiguchi and colleagues at Toyohashi University of Technology and Hamamatsu Photonics Ltd have improved the emission intensity from europium ions by magnesium co-doping and fabricated red LEDs with europium and magnesium doped active layer grown by ammonia source MBE.
The optimal magnesium co-doping selectively enhanced a specific emission site and contributed to a photoluminescence (PL) intensity increase of more than one order
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www.compoundsemiconductor.net July 2013
of magnitude. From the ratio of PL integrated intensity at 25 K to that at 300 K, the PL efficiency was determined to be as high as 77 percent.
On the basis of these results, europium doped GaN based LEDs were fabricated. Clear rectification characteristics with a turn-on voltage of 3.2 V were observed and a pure red emission was observed by the naked eye at room temperature.
These results suggest that europium and magnesium doped GaN is expected to be utilised for realising new nitride-based light-emitting devices.
This work has been described in the paper, “Red-Light-Emitting Diodes with Site-Selective Eu-Doped GaN Active Layer,” by H Sekiguchi et al in Japanese Journal of Applied Physics, 52 (2013). DOI: 10.7567/JJAP.52.08JH01
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