news digest ♦ LEDs
The market for advanced precursors used in semiconductor devices is expected to grow 40 percent to almost $3 billion by 2017.
This is according to a new report by Linx Consulting, a market research firm which specialises in the electronic materials industry.
This growth in advanced precursors is across all thin film deposition technologies, including atomic layer deposition, electrochemical deposition, spin-on processing,
SACVD, and CVD, as outlined in the 4th edition of the Linx industry analysis report, “Advanced Thin Film Processes & Materials for FEOL and Interconnect Applications 2012 - 2017”.
Thin Film Deposition Growth (on a $ basis)
Aix-834-5x8” reactor
“Producing gallium nitride based LEDs on 200 mm silicon substrates is a promising route towards a much lower chip manufacturing cost,” comments Andreas Tönnis, Chief Technology Officer at Aixtron. “This second award within a short period of time again confirms the high degree of innovation of Aixtron’s R&D work in close cooperation with our customers.”
With the AIX G5+, Aixtron has created a novel 5 x 200 mm technology package for the existing AIX G5 HT for production of GaN-on-Si devices, offering the industry’s largest multi 200 mm MOCVD reactor. Manufacturers such as the US company Transphorm will build on Aixtron’s advanced GaN-on-Si expertise, expanding productivity from 150 to 200 mm diameter wafers, with the goal of fully exploiting economies of scale from the AIX G5+.
Aixtron`s GaN-on-Si tool wins Aurora 2013 award
After being awarded at the CS awards for this tool the firm has been once again been recognised for its cost efficient MOCVD AIX G5+ reactor used for gallium nitride-on-silicon development
Aixtron SE was awarded the 2013 LEDinside Aurora Award in the category “Most efficient MOCVD Equipment” on June 11th, 2013.
Aixtron received the award for its AIX G5+ technology for Gallium-Nitride-on-Silicon (GaN-on-Si).
Aixtron’s system was chosen due to its production efficiency and technological advancement and was already awarded with the CS Industry Award in March of this year.
The well-known challenges of GaN-on-Si MOCVD processes are met by the novel features of the G5+ reactor, including modified temperature management, a new gas inlet and a chamber reset procedure. This results in minimization of wafer bow and elimination of so-called melt back effects, maximum process stability and highest uniformity due to a specifically designed rotational symmetry pattern.
Zeiss to acquire Xradia to enahance microscopy
The firm is intending to expand from light and electron microscopy into X-ray microscopy solutions
Optics and optoelectronics specialist Zeiss, is planning to acquire US-based Xradia, Inc.
Xradia is an medium-size company providing innovative 3D X-ray microscopes for industrial and academic research applications.
The closing of the transaction is subject to the fulfilment of customary closing conditions including a required
168
www.compoundsemiconductor.net July 2013
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179