Telecoms ♦ news digest


of pulsed RF power from a 50V supply. It also offers high gain of 16.5dB and high efficiency of 55 percent. The RFHA1027 is housed in a small form factor package of 24mm by 17.4mm, and is input and output matched to 50Ω, efficiently minimising external components.


What’s more, the package leverages RFMD’s advanced heat-sink and power-dissipation technologies to deliver excellent thermal stability and conductivity.


NPT2018 device in 3 x 6 DFN plastic package


Also part of the series are the NPT2018 and NPT2019 devices, which are housed in a 3 x 6 DFN plastic package with output powers of 12W and 25W respectively.


The RFHA1027 targets new and existing radar architectures requiring ruggedness and reliability. The introduction of RFHA1027 follows the previous release of RFHA1020 (280W L-Band) and RF3928 (280W S-Band).


“RFMD is pleased to introduce this new device with industry-leading power performance in support of diverse-end markets,” says Jeff Shealy, vice president and general manager of RFMD’s Power Broadband business unit.


“RFMD’s GaN product portfolio clearly demonstrates our continued commitment to technology and product leadership, and we look forward to introducing additional GaN devices that feature superior power density, high efficiency, rugged dependability, and ‘green’ power consumption advantages,” concludes Shealy.


NPT2021 device in industry-standard TO272 plastic package


Finally, the NPT2021 (50W) and NPT2022 (100W) come in the industry-standard TO272 plastic package.


Samples are available now with full production scheduled for Q3 of 2013.


RFMD reveals 500W GaN amplifier for L-band


The gallium nitride device supports radar architectures requiring ruggedness and reliability


RF Micro Devices has unveiled a GaN matched power transistor (MPT) that the firm says will deliver industry- leading pulse power performance of 500W in a compact flanged package at L-Band.


RFMD’s new amplifier, the RFHA1027, is optimised for pulsed power applications requiring efficiency and compactness.


It operates from 1.2GHz to 1.4GHz and provides 500W


Samples and production quantities are available now through RFMD’s online store or through local RFMD sales channels.


Northrop sampling its first GaN packaged PAs


The firm’s gallium nitride device is targeted towards the military and commercial high-power amplifier markets


Northrop Grumman Corporation has developed a new GaN flange packaged power amplifier, APN180FP, targeting military and commercial Ka-band communication applications.


This product represents the first commercial availability of a packaged, GaN-based component from the company.


“The APN180FP provides customers with a powerful, easy-to-use, high-frequency product that greatly expands the accessibility of Monolithic Microwave Integrated Circuits [MMICs]. Initial engineering evaluation sampling of prototypes is underway. Preproduction quantities will be available later this summer,” says Frank Kropschot, general manager of the Microelectronics Products and Services business unit of Northrop Grumman Aerospace


July 2013 www.compoundsemiconductor.net 105


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