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New products purchased for use in A&D applications are planned for inclusion in the Freescale Longevity Program, with assured supply for 15 years.
Freescale expands GaN RF offering for land mobile market
The firm maintains its Airfast RF gallium nitride power solutions deliver exceptional performance and industry- leading ruggedness
Freescale Semiconductor has introduced one GaN and three LDMOS (Lateral Double-diffused MOSFET)power transistors to its flagship family of Airfast RF power solutions.
They are all designed to exceed stringent land mobile market requirements for exceptional ruggedness.
The new Airfast GaN device targets multiband applications, where it eliminates the need for large and complex, or even multiple radios.
“Until now, engineers have faced significant challenges in developing multi-band systems that are large, complex and expensive to design,” says Ritu Favre, senior vice president and general manager of Freescale’s RF business. “The latest additions to our Airfast RF power portfolio enable exceptional broadband performance to land mobile designers, all within an ultra-compact footprint.”
For radio operators and public safety personnel, the ability to communicate with multiple agencies is critical to taking rapid, organised and efficient action during emergency situations.
The broadband performance of Freescale’s new Airfast AFG30S010 GaN device allows a single power amplifier to support many land mobile bands, eliminating the need to design large, expensive and complex multi- band systems for multi-agency communication. Offering high efficiency and advanced thermal performance, the AFG30S010 device provides the functionality to deliver a reduced amplifier footprint, critical to meeting customer demands for smaller product form factors.
The Airfast GaN device operates from a 28 Vdc supply and operates at 10 W across the entire 136-941 MHz frequency band. It can survives over 20:1 VSWR with simultaneous over voltage and overdrive. With improved
system reliability and lower maintenance costs, the GaN module eliminates the need for complex protection circuits, which reduces overall system cost further still. Freescale says it also exhibits high efficiency across a wide frequency range.
Sample quantities of the AFG30S010 device are planned to be available in Q4 2013.
Cree ships over two million GaN HEMT telecom devices
The company says gallium nitride HEMT prices have greatly improved and are now a viable alternative to silicon LDMOS transistors for cellular telecom amplifiers
Cree says it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications.
The firm says it is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth.
As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers.
The use of GaN HEMT in transmitter amplifiers is gaining attention in the cellular telecommunications industry due to the ability to decrease power consumption and size, and increase bandwidth capabilities.
The world’s mobile networks are reported to consume about 120TWh of electricity per year (for an average cost of US$14.4 billion), and 50 percent of the networks power is consumed by power amplifiers and associated components. Consequently, improved power amplifier efficiency can result in considerable energy savings.
“Wireless telecommunication leaders are leveraging the performance advantages of Cree’s GaN HEMTs,” says Tom Dekker, director sales and marketing, Cree RF Business Unit. “We are very pleased we achieved our two millionth GaN HEMT cellular telecom shipment milestone. GaN HEMT prices have greatly improved and are now a viable alternative to Si LDMOS transistors for cellular telecom amplifiers. We target continued growth of our telecommunication volumes.”
The next-generation performance enabled by Cree GaN HEMT are required to support today’s 4G LTE cellular
July 2013
www.compoundsemiconductor.net 159
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