news digest ♦ Telecoms Systems.
“This amplifier is produced in Northrop Grumman’s advanced microelectronics wafer fabrication facility in Manhattan Beach, California, which has provided large volumes of compound semiconductor products to both military and commercial customers for more than 20 years,” Kropschot adds. “We are targeting the APN180FP for the growing Ka-band satellite communication terminal and the commercial wireless infrastructure markets.”
The APN180FP is a 0.2 mm GaN HEMT MMIC power amplifier chip mounted in a flange mount package. It operates at between 27 and 31 GHz and is optimised for operation between 29-31 GHz.
This power amplifier operates with a drain voltage of +28V and provides 21 dB of linear gain, +37 dBm (5.0 W) of output power at 1 dB gain compression and +39 dBm (8 W) in saturation with Power Added Efficiency of 26 percent at midband.
For less-demanding applications, the APN180FP can be operated from a drain voltage as low as +20V while still producing +37 dBm (5 W) of saturated output power.
“This new product is a follow on to the GaN MMICs we released in November 2012, and is the first of several package and module products we plan to introduce during the next few months,” Kropschot notes.
“It’s based on MMICs using Northrop Grumman’s 0.2um GaN HEMT process developed partially under the Defence Advanced Research Projects Agency’s Wide Band Gap Semiconductors for Radio Frequency program,” adds Kropschot.
The agency’s program was the first of several key GaN technology development contracts awarded to Northrop Grumman beginning in 2002.
Samples are available now and preproduction quantities will be available in July. Production quantities will be available in the fourth quarter of 2013.
Sumitomo`s 500W GaN PAs offer superior packaging & performance
The gallium nitride devices are claimed to be about half the size of similar power amplifiers
Sumitomo Electric Device Innovations USA, Inc. (SEDU) is introducing new 500W single-ended GaN power amplifiers (PAs) for S-band radar at IMS 2013 in Seattle.
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The devices are the first in their class housed in a space- saving IV package - at 17.4mm x 24mm x 5 mm about half the size of current PAs - while offering high efficiency and gain to Radar manufacturers.
“The new PAs are a natural extension of our expertise in GaN technology and reduced footprint, resulting in devices that combine high-power performance into the smallest packages,” says John Wyatt, President of Sumitomo Electric Device Innovations USA. “This expertise enables radar designers to evolve designs into smaller form factors while enhancing performance.”
Key Features/Benefits
The PAs are internally matched to provide optimum power and gain for 50 Ω systems and have a high operating voltage of 50V. The GaN devices have a high gain, with a minimum target of 12 dB and an efficiency with 60 percent being the typical target. For broadband operation, two devices cover the entire S-band. The modules also have low thermal resistance, for superior heat dissipation and come in a compact IV package to save footprint.
As the names suggest, the 2731-500W operates at a frequency of 2.7-3.1 GHz while the 3135-500W operates in the 3.1-3.5 GHz band. Both devices have a minimum output power of 500 W, a typical pulse width of 150µs, and a typical duty of 10 percent.
Sumitomo’s GaN PAs for radar applications span from L-Band to X-Band with power levels up to 600W.
Avago adds to its family of small cell RF front-end solutions
The new GaAs (gallium arsenide) pHEMT based RF power amplifiers feature excellent linearity, gain and power-added efficiency
Avago Technologies has launched two new RF power amplifiers (PAs), the MGA-43728 and MGA-43828, and a new WiFi FBAR filter, the ACFF-1024, designed specifically for small cell base transceiver station (BTS) applications.
The MGA-43728 and MGA-43828 are new UMTS/ LTE Band 7 and Band 8 PAs respectively. They feature high linearity, gain and power-added efficiency with an integrated power detector and a shutdown function.
Both PAs have been manufactured using the firm’s
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