news digest ♦ LEDs Engineering at United Silicon Carbide.
“With these capabilities our engineers have the ability to develop and enhance our power device designs through simulation prior to manufacturing and know that our devices are going to perform as we expect them to after manufacturing and with higher production yields. This allows USCi to get our product to market with minimal time and costs,” continues Bhalla.
“Silvaco has always been a leader in the TCAD industry,” adds David Halliday, CEO at Silvaco. “Silicon Carbide is a technology that Silvaco implemented into our simulators several years ago. The maturity of this capability has been extremely important and beneficial to our customers in the power industry. Silvaco continues to offer innovative solutions with all of our products in order to supply the semiconductor industry with ‘Best in Class’ TCAD and EDA products.”
United Silicon Carbide, Inc. is a semiconductor company pioneering the development of high efficiency SiC devices. USCi has been devoted to SiC device development for over a decade, providing its customers access to SiC transistor technologies.
Silvaco, Inc. is a provider of TCAD, circuit simulation, and IC CAD software tools. Silvaco’s tools are used by fabs for developing semiconductor processes, and design houses for developing analogue, mixed-signal, and RF integrated circuits.
International Rectifier and EPCC agree to cooperate
The settlement and royalty agreement related to IR’s gallium nitride on silicon process for power devices ends litigation between the two companies
International Rectifier Corporation (IR) has entered into a settlement agreement with Efficient Power Conversion Corporation (EPCC).
This will result in the payment of royalties to IR on the sale of GaN on silicon based power devices from 2015- 2023, subject to an offset in certain cases.
The settlement agreement resolves all disputes between EPCC and certain of EPCC’s principals, including Alex Lidow, and IR without judicial determination of the merits of any party’s claims or defences. Other terms of the agreement are confidential.
IR brought suit against EPCC, Alex Lidow and others in 2009 for misappropriation of trade secrets associated
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www.compoundsemiconductor.net July 2013 ATI block diagram
Operating at speeds of up to 350 GHz, 9HP is claimed to be one of the first SiGe technologies in the industry featuring the density of 90nm BiCMOS. It delivers higher performance, lower power and higher levels of integration than current 180nm or 130nm SiGe offerings.
with its GaN on silicon program. Alex Lidow had also sued IR for wrongful termination as the company’s CEO. When the settlement occurred, the matter was awaiting trial in the Los Angeles Superior Court. “We believe this resolution is positive for IR and will allow the company to put this dispute behind us,” states IR’s President and Chief Executive Officer, Oleg Khaykin. “We will continue to direct our attention and resources to the commercialisation of our GaN on silicon technology platform as well as continuing to innovate and improving our leading competitive position in GaN on silicon based power devices.”
Tektronix to use IBM’s SiGe technology in oscilloscopes
The new performance 70GHz silicon germanium oscilloscope series will offer improved signal fidelity to power high end test applications
Tektronix, Inc.’s next generation of high performance real-time oscilloscopes will incorporate IBM’s latest 9HP SiGe chip-making process.
This fifth generation of IBM’s semiconductor technology along with other advances such as patent pending Asynchronous Time Interleaving (ATI) will result in oscilloscopes with bandwidth capability of 70 GHz and improvements in signal fidelity.
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