news digest ♦ LEDs respectively, in an AC360 ceramic package.
The company plans to support a broad range of A&D applications with entirely new GaN RF power transistor products, as well as its portfolio of more than 400 LDMOS RF power transistor and GaAs monolithic microwave integrated circuit (MMIC) products. These Freescale products will be supported by a dedicated team of professionals focused exclusively on A&D markets and customers.
NPT2018 device in 3 x 6 DFN plastic package
Also part of the series are the NPT2018 and NPT2019 devices, which are housed in a 3 x 6 DFN plastic package with output powers of 12W and 25W respectively.
“Freescale has more than 60 years of RF power innovation and experience, and we look forward to extending our focus beyond our leading position in RF power transistors to growing A&D markets,” notes Ritu Favre, senior vice president and general manager of Freescale’s RF business. “A&D equipment manufacturers will benefit from Freescale’s long track record of working closely with customers to create cost- effective solutions that combine superb performance, proven reliability and extreme ruggedness.”
According to analyst firm ABI Research, global sales for RF power devices targeting the defence market (under 4 GHz and above 4 W output) will total US $144 million by 2018.
NPT2021 device in industry-standard TO272 plastic package
Finally, the NPT2021 (50W) and NPT2022 (100W) come in the industry-standard TO272 plastic package.
Samples are available now with full production scheduled for Q3 of 2013.
Freescale to boost GaAs and GaN RF aerospace & defence markets
The RF power pioneer’s new A&D-focused unit will take a multi-technology approach to leverage the advantages of its gallium arsenide, gallium nitride and LDMOS product lines
Freescale Semiconductor is launching a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet the requirements of the U.S. aerospace and defence (A&D) market.
158
www.compoundsemiconductor.net July 2013
“Freescale has been the market leader in RF power devices for wireless infrastructure for many years,” adds Lance Wilson, research director, RF Devices at ABI Research. “That experience and expertise should serve them well as they branch out into other RF power market segments, including A&D.”
Freescale’s RF business (formerly part of Motorola’s Semiconductor Products Sector), has more than six decades of history and expertise in RF power transistor development, introducing its first device in 1952.
Freescale’s GaAs MMIC devices cover applications to over 5 GHz and include gain block amplifiers, power amplifiers (up to 4 W), and low-noise amplifiers with noise figures as low as 0.35 dB. The firm’s first GaN RF power transistors are planned for availability in late 2013.
The company’s experience and technology will be complemented by a team of RF experts dedicated to the A&D market, including technical and applications support. The Freescale RF A&D team is led by a senior member of Freescale’s technical staff, with more than 30 years of RF power transistor experience, from design engineering to executive management.
He is joined by a former marketing director for Freescale’s RF power business, who possesses 40 years of experience in marketing, sales and distribution. The Freescale products will additionally be supported by a dedicated team of marketing, program management, applications, regulatory compliance and other
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179