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“Raytheon has been at the forefront in advancing the maturity and production-readiness of GaN technology, and this recognition reflects our mutual collaboration and achievement, having worked closely with our customers,” says Joe Biondi, vice president of Advanced Technology for Raytheon’s Integrated Defence Systems business. “The limitless benefits of GaN in performance and reliability deliver enhanced capability and affordability to our customers.”
Raytheon also demonstrated that the reliability of their GaN technology exceeded the requirement for insertion into production military systems. This maturation of GaN resulted in a Manufacturing Readiness Level (MRL) production capability of “8,” the highest level obtained by any organisation in the defence industry for this technology. MRL is a measure used by the OSD and many of the world’s major companies to assess the maturity of manufacturing readiness.
GaN technology significantly extends the war fighter’s reach into the battle space by increasing radar ranges, sensitivity and search capabilities. Through the Title III program, GaN yield was improved by more than 300 percent and cost was reduced more than 75 percent for Monolithic Microwave Integrated Circuits.
An MMIC is a type of integrated circuit device that operates at microwave frequencies (300 MHz to 300 GHz). These devices typically perform functions such as microwave mixing, power amplification, low noise amplification and high frequency switching.
GaN technology also supports a reduction in the size of a system’s antenna, which provides flexibility, improves transportability and reduces acquisition and lifecycle costs without sacrificing performance.
Digi-Key exclusively provides GeneSiC 3300 V Schottky rectifiers
GeneSiC believes its SiC (silicon carbide) 3300 V rating is a key differentiator for the high voltage generator market and will allow significant benefits
Digi-Key Corporation has signed an agreement to be the exclusive distributor of the latest low-capacitance SiC Schottky rectifiers from GeneSiC Semiconductor.
These innovative rectifiers are specifically targeted towards voltage multiplier circuits and high voltage assemblies used in a wide range of x-ray, laser, and particle generator power supplies.
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GeneSiC’s 3300 V/0.3 A Schottky rectifiers feature zero everse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher AC input voltages. The near-ideal switching characteristics allow the elimination/dramatic reduction of voltage balancing networks and snubber circuits.
3300 V/0.3 A SiC Rectifier Technical Highlights On-state Drop of 1.7 V at 0.3 A Positive temperature coefficient on VF Tjmax = 175oC
Capacitive charge 52 nC (typical).
“This product offering comes from years of sustained efforts at GeneSiC. We believe the 3300 V rating is a key differentiator for the high voltage generator market, and will allow significant benefits to our customers. GeneSiC’s low VF, low capacitance SiC Schottky Rectifiers enable this breakthrough product,” says Ranbir Singh, President of GeneSiC Semiconductor.
All devices are 100 percent tested to full voltage/current ratings and housed in halogen-free, RoHS-compliant, industry-standard TO-220FP (Full Pack) packages.
These advanced devices, as well as the rest of GeneSiC Semiconductor’s portfolio of quality products, are available for immediate shipment by visiting any of Digi- Key’s global websites.
MDS 2-D electronics leaps forward
Researchers in the US have advanced molybdenum disulphide (MoS2) technology. This semiconductor could be joined with graphene and hexagonal boron nitride to form FETs, integrated logic circuits, photodetectors and flexible optoelectronics
Scientists at Rice University and Oak Ridge National Laboratory (ORNL) have advanced on the goal of two- dimensional electronics.
They have developed a process to control the growth of uniform atomic layers of molybdenum disulphide (MDS).
Similar to silicon, MDS is an indirect band gap semiconductor. It is one of a trilogy of materials needed to make functioning 2-D electronic components. They
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