news digest ♦ Telecoms assemblies using Schottky quad diodes.


How to merge manganese with GaN for spintronics


To bind gallium nitride with manganese, scientists have used the nitrogen polarity of GaN and heated the sample


MACOM MAMX-011009 chip


The module is packaged in an ultra small 1.5 x 1.2 mm TDFN surface mount, allowing customers an easy, efficient and space-saving broadband solution. The mixer has a single RF port, requires no biasing and has excellent 2xLO and 3xLO isolation eliminating the need for extra filtering. The device requires +15dBm of LO power that can be easily attained by implementing the MAAM-011101, which is a single bias low cost 4-20 GHz buffer amplifier offered by MACOM.


“The MAAM-011009 was designed engineer-to-engineer with low cost and ease of use in mind,” says Amer Droubi, Product Manager. “In addition to the ultra small size and the inherit advantages of its sub-harmonic topology, this broadband mixer enables customers to design systems with high IF frequency requirements - up to 5.8 GHz in 802.11 based radios.”


The MAMX-011009, can be used for up or down frequency conversion. The mixer integrates an 180° balanced diode topology that allows the LO to be injected at ½ the LO mixing frequency, which improves isolation and simplifies system requirements for the customer.


The table below outlines typical performance:


Ten years ago, scientists were convinced that a combination of manganese and GaN could be a key material to create spintronics. This field refers to the next generation of electronic devices that operate on properties found at the nanoscale.


But researchers grew discouraged when experiments indicated that the two materials were as harmonious as oil and water.


Now, a new study led by Ohio University physicists suggests that scientists should take another look at this materials duo, which was once heralded for its potential to be the building block for devices that can function at or above room temperature.


“We’ve found a way - at least on the surface of the material - of incorporating a uniform layer,” says Arthur Smith, a professor of physics and astronomy at Ohio University who leads the international collaboration of Argentinian and Spanish researchers.


The scientists made two important changes to create the material merger, which they report in the journal Physical Review B. First, they used the nitrogen polarity of GaN, whereas conventional experiments used the gallium polarity to attach to the manganese, Smith explained. Second, they heated the sample.


At temperatures less than 105oC, the manganese atoms “float” on the outer layer of gallium atoms. When the scientists raised the temperature about 100oC, Smith says, the atoms connected to the nitrogen layer underneath, creating a manganese-nitrogen bond. This bond remains stable, even at very high temperatures.


The theoretical scientists accurately predicted that a “triplet” structure of three manganese atoms would form a metastable structure at low temperatures, Smith says. But at higher temperatures, those manganese atoms break apart and bond with nitrogen.


Samples of MAMX-011009 are available from stock.


102 www.compoundsemiconductor.net July 2013


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