LEDs ♦ news digest applications on our new ComBond equipment platform.”


EVG’s ComBond technology has been developed in response to market needs for more sophisticated integration processes for combining materials with different lattice constant and coefficient of thermal expansion (CTE).


The process and equipment technology enables the formation of bond interfaces between heterogeneous materials - such as silicon to compound semiconductors, compound semiconductors to compound semiconductors, germanium to silicon and germanium to compound semiconductors - at room temperature, while achieving excellent bonding strength.


The ComBond technology will be commercially available later this year on a new 200mm modular platform currently in development, called EVG580 ComBond, which will include process modules that are designed to perform surface preparation processes on both semiconductor materials and metals.


In addition to PV, other potential application areas for processes developed in cooperation between EVG and Fraunhofer ISE include LEDs and silicon photonics.


Novel Devices


Aixtron reactor to be installed at University of Illinois


The flexible MOCVD tool will be used to develop III-V solar nanowires


Aixtron SE says it delivered a Close Coupled Showerhead (CCS) reactor in the second quarter of 2013 to the University of Illinois at Urbana-Champaign, USA.


The 3x2” system will be used for the development of III-V compound semiconductor based materials and devices, including nanowire based solar cells and transistors. Aixtron received the order in the fourth quarter of 2012.


“We needed a flexible research platform that can support a variety of programs at the University. The critical issues for us are cost of ownership and process flexibility, which is essential for materials research in a multi-user environment,” says Xiuling Li, a professor from the Department of Electrical and Computer Engineering and Micro and Nanotechnology Laboratory (MNTL) at Illinois.


Electrons flash across a series of gold quantum dots on boron nitride nanotubes. Michigan Tech scientists made the quantum-tunnelling device, which acts like a transistor at room temperature, without using semiconducting materials. (credit: Yoke Khin Yap)


Scientists have experimented with different materials and designs for transistors to address these issues, always using semiconductors like silicon. Back in 2007, Yap wanted to try something different that might open the door to a new age of electronics.


“The idea was to make a transistor using a nanoscale July 2013 www.compoundsemiconductor.net 171


The MNTL at Illinois contains more than 8,000 square feet of Class 100 and Class 1000 cleanroom space and recently underwent an US $18 million expansion that added faculty and student office space.


Transistors without silicon


The room temperature tunnelling behaviour of boron nitride (BN) nanotubes has been demonstrated with the aid of gold quantum dots


For decades, electronic devices have been getting smaller, and smaller, and smaller. It’s now possible - even routine - to place millions of transistors on a single silicon chip.


But transistors based on semiconductors can only get so small.


“At the rate the current technology is progressing, in 10 or 20 years, they won’t be able to get any smaller,” notes physicist Yoke Khin Yap of Michigan Technological University. “Also, semiconductors have another disadvantage: they waste a lot of energy in the form of heat.”


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