Telecoms ♦ news digest proprietary 0.25µm GaAs E-pHEMT technology.
transistors to its flagship family of Airfast RF power solutions.
They are all designed to exceed stringent land mobile market requirements for exceptional ruggedness.
The new Airfast GaN device targets multiband applications, where it eliminates the need for large and complex, or even multiple radios.
Avago MGA-43X28 power amplifiers
“Avago is committed to serving Small Cell customers with an expanded portfolio of highly differentiated products and cost-effective solutions,” says Ron Ruebusch, vice president and general manager of Avago’s Wireless Semiconductor Division. “Leveraging proven mobile handset technology, Avago shall continue to invest in developing new products catering to the growing Small Cell market segment.”
The MGA-43728 has a linear Pout of 27.3 dBm at 48 dBc ACLR (LTE, 10MHz/50RB), a gain of 38.3 dB and power added efficiency (PAE) of 13.7 percent.
The MGA-43828 module has a linear Pout of 27 dBm at 50 dBc ACLR (UMTS, 5MHz) with a 5V supply, a gain of 33 dB and PAE of 15 percent.
Both modules have a fully matched 50 Ω input and output and come in a compact 5 x 5 x 0.9 mm package.
The MGA-43728 and MGA-43828 are priced at US $9.24 each in 1,000 unit quantities. Samples and production quantities are available now through Avago’s direct sales channel and worldwide distribution partners.
Freescale expands GaN RF offering for land mobile market
The firm maintains its Airfast RF gallium nitride power solutions deliver exceptional performance and industry- leading ruggedness
Freescale Semiconductor has introduced one GaN and three LDMOS (Lateral Double-diffused MOSFET)power
“Until now, engineers have faced significant challenges in developing multi-band systems that are large, complex and expensive to design,” says Ritu Favre, senior vice president and general manager of Freescale’s RF business. “The latest additions to our Airfast RF power portfolio enable exceptional broadband performance to land mobile designers, all within an ultra-compact footprint.”
For radio operators and public safety personnel, the ability to communicate with multiple agencies is critical to taking rapid, organised and efficient action during emergency situations.
The broadband performance of Freescale’s new Airfast AFG30S010 GaN device allows a single power amplifier to support many land mobile bands, eliminating the need to design large, expensive and complex multi- band systems for multi-agency communication. Offering high efficiency and advanced thermal performance, the AFG30S010 device provides the functionality to deliver a reduced amplifier footprint, critical to meeting customer demands for smaller product form factors.
The Airfast GaN device operates from a 28 Vdc supply and operates at 10 W across the entire 136-941 MHz frequency band. It can survives over 20:1 VSWR with simultaneous over voltage and overdrive. With improved system reliability and lower maintenance costs, the GaN module eliminates the need for complex protection circuits, which reduces overall system cost further still. Freescale says it also exhibits high efficiency across a wide frequency range.
Sample quantities of the AFG30S010 device are planned to be available in Q4 2013.
GaAs and silicon CMOS PAs go head to head in LTE war
Qualcomm has developed a CMOS power amplifier (PA) which is intended to knockoff whitebox mobile phone vendors
In the first half of 2013, the biggest news in the GaAs July 2013
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