news digest ♦ Telecoms
(CTB/CSO), which is a critical characteristic in multi- carrier CATV environments.
Nitronex process creates industry’s toughest GaN transistor
The firm has qualified its gallium nitride transistor for military and satellite communications, broadband, RADAR, wireless and point to point microwave applications
Nitronex, a designer and manufacturer of GaN based RF solutions for the defence, communications, cable TV, and industrial & scientific markets, has fully qualified the robust NPT1015 transistor.
TriQuint has also released its new GaAs power doubler that delivers the highest gain and output power among ‘green’ 12 Volt CATV amplifiers. The new amplifier provides RF output of +58dBmV/ch while consuming less than 8W, making it one of the highest output 12V GaAs solutions in the CATV industry. Thanks to its low power consumption and gain, it can replace the equivalent of two legacy devices.
“TriQuint continues to expand solutions for cable TV infrastructure. Early customer feedback has been very positive on high output amplifier products,” comments James L. Klein, Vice President and General Manager for TriQuint’s Infrastructure and Defense Products. “Today’s homes, schools and businesses are looking to cable and fibre operators to provide high speed uninterrupted connectivity to ensure access for digital education and entertainment. TriQuint’s GaN and GaAs product innovations are key enablers for the systems.”
The growth of CATV technologies is important to delivering sought-after content, notes Directing Analyst for Broadband Access and Video, Jeff Heynen, of Infonetics Research.
“Cable operators are gaining significant traction with DOCSIS 3.0 in North America, Europe, Korea and Japan; they’re in the early stages of rolling out video gateways that combine DOCSIS CPE with video transcoding capabilities to deliver whole-home, multi-screen service; we anticipate hearty growth for the devices over the next few years,” says Heynen.
TriQuint says its innovative CATV / FTTH products deliver improved system-level performance. They sre offered as surface-mount, 40-pin 5x7mm QFN packages which drive cost-effective direct-to-board assembly.
Samples and evaluation boards are now available; both devices are production-ready.
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www.compoundsemiconductor.net June 2013
The NPT1015 is a 28V, DC-2.5GHz, 50W power transistor with 15dB saturated gain and 65 percent peak drain efficiency at 2GHz.
The thermal resistance of the NPT1015 transistor is 1.9°C/W, which is among the lowest in the industry in this power class. This GaN technology is capable of surviving the industry’s most severe robustness tests without significant device degradation.
Developed under an entirely new design process, the NPT1015 leverages Nitronex’s existing 28V NRF1 process platform, which has been in volume production since 2009. One hundred NPT1015 devices from four wafers were subjected to a 15:1 VSWR at all phase angles with 90°C base plate temperature.
During VSWR testing, all devices operated in a saturated average power condition driven by a 4000 carrier 200MHz wideband signal with a 19.5dB peak-to-average ratio. The devices showed 100 percent survivability and only ~ 0.2dB average change in saturated output power.
“The NPT1015 is a robust next-generation product, as it incorporates significant thermal management improvements that increase breakdown and lowers thermal impedance. We are using these same techniques in our new 48V product line. Nitronex is very excited about the advancements in product robustness and reliability that put our GaN-on-Si devices on par or ahead of competitive products that primarily use GaN-on-
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