Equipment and Materials ♦ news digest
UE is the electrode potential. It is the voltage applied to the electrode (the ZnO/InP sample) during the photoelectrical measurements performed in aqueous solution.
Figure 2 (b) C-2 versus applied voltage for the Hg n-ZnO junction realised with a Hg contact area of 0.432 mm². The linear fitting allows calculating a donor concentration of 3.7 × 1016 cm-3
Figure 1. Photocurrent versus applied potential (UE) recorded at three different irradiating light wavelengths, solution: 0.1 M ABE and potential scan rate 10 mV s-1. The inset shows a zoom of the plot in the region where the photocurrent becomes zero. A flat band potential UFB of about -0.6 V vs. Ag/AgCl is readable. All curves are related to a sample annealed in air at 600°C for 1 hour
The n-type conductivity of these samples was further confirmed by CV measurements employing a mercury probe (Fig. 2(b)).
The mechanism responsible of the p-type doping measured by Hall measurements can be ascribed to the formation of a very thin, high conducting layer at the ZnO/InP interface due to zinc ion migration into the InP substrate. This high conductive layer dominates the Hall effect measurements and instead is invisible to both CV and photocurrent-based methods.
All plots are related to a sample annealed in air at 600°C for 1 hour.
This work is described in detail in the paper, “Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate”, by R. Macaluso et al in the Journal of Applied Physics, 113, 164508, published online on 30th April 2013.
http://dx.doi.org/10.1063/1.4803080
Europe to boost micro- and nanoelectronic industries
A new initiative is supporting research, development and innovation and improvement in the entire semiconductor ecosystem
The European Semiconductor Industry Association (ESIA) welcomes the European Commission’s Communication “A European strategy for micro- and nanoelectronic components and systems”.
The actions outlined in the Communication will strengthen the competitiveness and growth potential of the micro- and nanoelectronics industry in Europe, and build upon the European initiative on Key Enabling Technologies (KETs) and HORIZON 2020.
ESIA believes that this Communication takes a decisive approach to reinforce the European semiconductor industry, and to increase its contribution to the wider European economy.
Figure 2 (a) C-2 versus UE plot recorded at f = 10 kHz in 0.2 M Na2HPO4 solution. The linear fitting allows calculating a donor concentration of about 1016 cm-3.
ESIA commends the acknowledgment that semiconductors play a crucial role in driving business
June 2013
www.compoundsemiconductor.net 169
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