NEWS REVIEW
IR commences shipments of GaN-on-silicon devices
INTERNATIONAL RECTIFIER CORPORATION has qualified and shipped products built on its gallium nitride (GaN)- based power device technology platform for a home theatre system manufactured by a leading consumer electronics company “Commencing commercial shipments based on our leading-edge GaN-based technology platform and IP portfolio extends IR’s leadership in power semiconductor devices and heralds a new era for power conversion, in line with our core mission to help our customers save energy,” states IR’s President and Chief Executive Officer, Oleg Khaykin.
“We fully anticipate the potential impact of GaN-based technology on the power conversion market to be at least as large as the introduction of the power HEXFET by IR over 30 years ago.“
IR says that this provides a capital- efficient manufacturing model that enables customers with improvements in
key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology.
“GaN has the potential to be infused into every business unit and product line within IR over the long-term. We are excited about GaN, and see it as one of the major drivers for our long-term revenue growth, and market share expansion. I would like to thank all of the individuals involved and congratulate them for this tremendous accomplishment,” Khaykin concludes.
The GaN-based power device technology platform is the result of ten years of research and development by IR based on the company’s proprietary GaN-on- silicon epitaxial technology.
The high throughput, 150mm GaN-on- Si epitaxy, together with subsequent device fabrication processes which are fully compatible with IR’s current cost
effective silicon manufacturing facilities, offers customers a commercially viable manufacturing platform for GaN-based power devices.
Sharp’s multi-junction cell breaks efficiency record
SHARP CORPORATION has achieved what it claims is the world’s highest solar cell conversion efficiency of 37.9 percent.
This is based on a survey by Sharp as of April 24th, 2013, for non-concentrator solar cells at the research level.
The conversion efficiency was confirmed by the National Institute of Advanced Industrial Science and Technology (AIST). This is one of several organisations that officially certify energy conversion efficiency measurements in solar cells. The cell surface was approximately 1cm2.
Sharp achieved this latest breakthrough as a result of a research and development initiative promoted by Japan’s New Energy and Industrial Technology Development Organisation (NEDO) on the theme of “R&D on Innovative Solar Cells.”
NEDO is one of Japan’s largest public management organisations for promoting research and development as well as for disseminating industrial, energy, and environmental technologies. Compound solar cells utilise photo-absorption layers made from compounds consisting of two or more elements, such as indium
and gallium. The basic structure of this latest triple-junction compound solar cell uses proprietary Sharp technology that enables efficient stacking of the three photo-absorption layers, with InGaAs as the bottom layer.
By optimising the relative proportions of indium, gallium, and arsenic, Sharp succeeded in increasing the efficiency with which the cell absorbs sunlight at its various wavelengths. This improvement enabled Sharp to achieve a solar cell conversion efficiency of 37.9 percent.
Sharp’s aim for the future is to apply this latest development success to concentrator photovoltaic power systems that use lenses to collect and convert sunlight into electricity.
The company also foresees numerous other practical applications for the cells, such as on space satellites and vehicles.
June 2013
www.compoundsemiconductor.net 7
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