news digest ♦ Power Electronics Buildings and Smart Grids.”
Executing on this Communication has the potential to reverse the current trend in the European semiconductor market, which has seen production in Europe drop to less than 10% percent of world production in 2011.
“Leadership in innovation is key to developing a sustainable advantage for European industry and we need to build on the scientific excellence in Europe to turn great ideas into globally competitive technologies and related manufacturing,” comments Carlo Bozotti, President and Chief Executive Officer of STMicroelectronics.
“With traditional strengths in analogue and power as well as more recent innovations in technologies, companies in Europe have the capability to continue to lead the development of the next wave of electronic products. The actions outlined in the Commission’s Communication demonstrate a clear commitment to Europe’s future,” adds Bozotti.
Hendrik Abma, Director-General of ESIA, says, “ESIA welcomes the ambition and vision of the European Commission’s strategy. ESIA has consistently underlined the importance of the European semiconductor industry to the competitiveness and vitality of the European economy, as well as to tackling the grand societal challenges, such as energy efficiency and aging populations.”
ESIA looks forward to the full implementation of the European Commission’s strategy for micro- and nanoelectronic components and systems. ESIA is fully aware that the strategy’s successful execution requires significant alignments among all stakeholders.
Element Six acquires Group4 Labs` GaN-on-diamond IP and assets
Synthetic diamond enables higher performance gallium nitride devices. This results in smaller, faster and higher power electronic devices for defence and commercial applications
Element Six has acquired the assets and intellectual property of Group4 Labs, Inc. (Group4), a specialist in GaN-on-diamond semiconductor technology for RF and high-power devices.
The acquisition will expand Element Six’s semiconductor portfolio for defence and commercial applications. The
158
www.compoundsemiconductor.net June2013 GaN-on-diamond wafer
This process reduces the operating temperatures of packaged devices, addressing heat issues that account for more than 50 percent of all electronic failures. Synthetic diamond dissipates heat up to five times better than existing materials, such as copper and SiC, enabling device manufacturers to produce smaller, faster and higher power electronic devices, with longer life spans and improved reliability.
When implemented within power amplifiers, microwave and millimetre wave circuits, GaN-on-diamond systems pose numerous benefits and applications within the defence and commercial sectors. This includes deployment in cellular base stations, radar sensing equipment, weather and communications satellite equipment, and inverters and converters typically used in hybrid and electronic vehicles.
The Group4 GaN-on-diamond technology was a critical element of TriQuint Semiconductor’s device, which won the Compound Semiconductor Industry Award in March. TriQuint demonstrated its new GaN-on-diamond, high electron mobility transistors (HEMT) in conjunction with partners at the University of Bristol, Group4 and Lockheed Martin under the Defence Advanced Research Projects Agency’s (DARPA) Near Junction Thermal Transport (NJTT) program.
TriQuint has designed devices using this technology to achieve up to a three-fold improvement in heat dissipation, the primary NJTT goal, while preserving RF functionality. This would translate into a potential reduction of the power amplifier size or increasing output
assets were acquired through an assignment for the benefit of creditors from Group4 (Assignment for the Benefit of Creditors), LLC.
Group4 claims to have developed the first commercially available composite semiconductor wafer that includes GaN and diamond. Designed for manufacturers of transistor-based circuits with high power, temperature and frequency characteristics, the GaN-on-diamond system enables rapid, efficient and cost-effective heat extraction.
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179 |
Page 180 |
Page 181 |
Page 182 |
Page 183 |
Page 184 |
Page 185 |
Page 186 |
Page 187 |
Page 188 |
Page 189 |
Page 190 |
Page 191