Power Electronics ♦ news digest
Barrier Schottky) diodes and MOSFETs, owing to the development of a novel CVD (Chemical Vapour Deposition) reactor for the growth on large-area (150mm) 4H-SiC.
The quality of the epitaxial layer enabled the fabrication of JBS (Junction Barrier Schottky) diodes in the industrial production line at STMicroelectronics. The characterisation of the first lots showed electrical performance comparable with the state-of-the-art 4°-off material.
In this context, the fundamental technological step was the chemical mechanical polishing (CMP) process - StepSiC reclamation and planarisation.
These steps were implemented at NOVASiC. This is a key issue both for the preparation of the substrates before epitaxial growth and for the sub-nanometric control of the surface roughness of the device active layers.
Within the project, the same company also developed epitaxial growth capability for both MOSFET and JFET devices.
Additional research activities in SiO2/SiC interfaces have been carried out in collaboration with ST and IMM-CNR to improve the channel mobility in 4H-SiC MOSFETs.
Finally, novel technological modules for high-temperature 4H-SiC JFETs and MOSFETs have been developed in collaboration between Acreo and FORTH, with the support of CCR for the study of molding compounds and “lead-free” die-attach materials for reliable packaging solutions.
The LAST POWER project also researched the use of GaN-based devices in power-electronics applications.
In particular, ST successfully obtained the development of AlGaN/GaN HEMTs epitaxial structures grown on 150mm silicon substrates, reaching a target of 3 m thickness and 200V breakdown.
LAST POWER worked with IMM-CNR, Unipress, and ST to develop the technological steps for normally-off AlGaN/GaN HEMTs with a “gold-free” approach. The process modules are fully compatible with the device- fabrication flow-chart set in the ST production line and are being integrated for HEMTs fabrication.
The fruitful interaction between the project partners working on material growth and device technology has enabled important steps towards monolithic integration of GaN-based and SiC-based devices, as both technologies have been successfully proven on 2° off axis 4H-SiC substrates.
SEMI highlights the need for InP and GaAs
The organisation says that the restriction of the use of indium phosphide and gallium arsenide would have a negative impact on the semiconductor industry and Europe as a whole. SEMI has also described a new directive which will bring down patent application costs
According to Heinz Kundert, president of SEMI Europe, being able to quickly identify and seize the potential offered by new technologies and new markets is critical in the semiconductor industry. Keeping track of public policy developments is equally important.
Decisions made in a national Ministry or an EU institution can have a direct impact on the industry.
A new EU patent procedure, to be introduced by mid- 2014, will significantly reduce the cost and time for a company to obtain a patent valid across 25 European states. The outcomes of the current review of substances under European EHS rules, for example, may have an impact on industry’s research priorities or its access to the EU market.
This article covers these topics: 7th SEMI Brussels Forum; EU Patent Protection; GaAs and InP under Review (REACH); RoHS Exemptions Expiring; Banned Substances under RoHS; EU Conflict Minerals Debate.
The SEMI Brussels Forum is one of Europe’s leading policy events for semiconductor equipment and materials, providing a unique platform for top-level executives and EU representatives to exchange views and debate how to reinforce Europe’s competitiveness in the global market.
The 7th SEMI Brussels Forum will discuss how Europe’s industry and policy-makers can increase their impact - both individually and jointly to reinforce Europe’s position.
How can industry build on its leading positions and expertise and optimise synergies? How can Europe balance its values and rules on free competition on one hand, with the need to provide for a global level playing field on the other?
SEMI says this is the only event that brings together top- level management and EU representatives to exchange views on how to reinforce Europe’s competitiveness. More information can be accessed via the link
www.semi. org/eu/brusselsforum.
New EU Patent Procedure Offers Automatic Protection in 25 Countries and Brings Down Costs
The new ‘EU Unitary Patent’, to be made available by April 2014, is expected to reduce the administrative and
June 2013
www.compoundsemiconductor.net 163
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179 |
Page 180 |
Page 181 |
Page 182 |
Page 183 |
Page 184 |
Page 185 |
Page 186 |
Page 187 |
Page 188 |
Page 189 |
Page 190 |
Page 191