news digest ♦ Telecoms
“The highly sophisticated capabilities of our newest ADAM product demonstrate our deep understanding of the design challenges and issues facing RF engineers today. The MMDS20254H solution delivers the advanced technology and comprehensive support required to help RF engineers optimize the performance of Freescale’s industry-leading Airfast RF power portfolio,” adds Favre.
Fuelled by the widespread adoption of TD-LTE and W-CDMA, Doherty amplifiers have regained prominence as an industry standard, providing high power- added efficiency when amplifying the types of signals associated with these popular protocols.
Freescale’s MMDS20254H ADAM device offers exceptional linearity/efficiency tradeoffs, while improving output power. The solution includes a coupler, digitally selectable phase shifters and step attenuators, while operating from a single voltage supply. The MMDS20254H is suitable for transmit protocols such as W-CDMA and LTE, using frequencies from 1800 to 2200 MHz, and is controlled using a SPI interface.
Product information
Freescale’s MMDS20254H ADAM is a GaAs MMIC based on E-pHEMT and InGaP HBT technology. Housed in a RoHS-compliant industry-standard 6 mm QFN package, the device allows phase and peaking adjustments from 1800 to 2200 MHz.
The MMDS20254H ADAM has a constant 90 degree phase offset between port 2 and port 3 versus frequency (500 MHz bandwidth). Digital adjustment is possible to optimize power amplifier performance under different conditions, including power level, supply voltage and temperature.
Pricing and availability
The MMDS20254H is available now. A comprehensive evaluation kit including the ADAM evaluation board, SPI connector board, control software and quick start guide is available upon request to qualified customers.
M/A-COM reveals tiny AlGaAs diode broadband shunt series
The aluminium gallium arsenide based PIN diode series delivers cost, time and space savings for high-power switching applications
M/A-COM Technology Solutions (MACOM) has launched a new family of broadband Shunt PIN Diodes for high-
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www.compoundsemiconductor.net June 2013 power switching applications.
These devices are designed for customers who need a versatile, low cost, ultra-small Shunt PIN Diode element for land mobile radio, wireless infrastructure and test instrument applications.
Unlike the competition, MACOM’s compact 1.5 x 1.2 mm plastic package reduces board space while enabling broadband performance comparable to chip- scale devices. Typical applications include high-power switching through 6GHz with incident power up to 100W.
MACOM’s Shunt PIN Diode device
“This family of Shunt PIN Diodes offers an excellent combination of broadband performance, ease of use and low cost,” says Paul Wade, Product Manager. “These devices are ideal for customers looking for cost and space savings to implement into their solutions.”
The 3 terminal, low-pass filter structure inherent in MACOM’s devices provides superior low- and high signal performance compared to 2 terminal PIN diode devices, making the Shunt PIN Diodes ideal for high-power switching applications through 12 GHz with incident power up to 100W.
The table below outlines typical part number performance:
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