news digest ♦ RF Electronics
These products offer performance, size and durability advantages for communications, radar and defence RF systems.
James L. Klein, Vice President and General Manager for Infrastructure and Defence Products, remarked that GaN’s performance advantages are now more accessible to RF manufacturers thanks to TriQuint’s expansion of process and product solutions.
He adds, “This announcement shows the accelerated pace of TriQuint innovation. Customers have access to more world-class products in addition to three GaN processes supported by packaging, assembly and test services. TriQuint is comprehensively addressing the most demanding RF requirements with the flexibility to engage customers of all sizes.”
Strategy Analytics foresees significant GaN growth. “While defence remains the largest GaN revenue source, infrastructure is growing fast. Sat-Com, power and CATV are ramping to higher revenues. Strategy Analytics forecasts that the market for GaN microelectronic devices will grow with a CAAGR of over 34 percent to approximately $186 million by 2015,” says Eric Higham, Director of Semiconductor Practice.
TriQuint’s original quarter-micron process is now complemented by a high voltage variant, TQGaN25HV. The new process extends the drain operating voltage of 0.25µm GaN to 48V while delivering higher breakdown voltage, greater power density and high gain for DC-10 GHz applications.
These advantages enable more rugged devices that can withstand VSWR mismatches that might destroy other circuits while delivering more RF output power.
A new TriQuint product designed with this process is T1G4012036-FS/FL, a 120W packaged transistor for radar and infrastructure. It is nearly two-thirds smaller than similar LDMOS devices. Additional products built with TQGaN25HV are now available.
TriQuint has taken GaN technology to new limits with its third process, TQGaN15. It pushes the frequency range of GaN to 40 GHz while delivering high power density and low-noise performance.
This 0.15µm GaN-on SiC-process was used to create TriQuint’s new TGA2594 (5W) and TGA2595 (10W) Ka-band VSAT ground terminal amplifiers. They have up to 35 percent PAE and are three times smaller than comparable GaAs solutions. Additional products built using TQGaN15 are now available.
TriQuint’s product portfolio of new GaN solutions also includes the ground-breaking TAT9988 direct-to-
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board MMIC amplifier for CATV and fibre to the home (FTTH) optic networks. It was created with the second- generation of TriQuint’s original TQGaN25 process. The TAT9988 leads the industry in gain, composite distortion performance and surface mount convenience.
TriQuint’s expanded range of GaN innovation is complimented by its integrated assembly services that include die-level device packaging, X-ray and testing. TriQuint is also a DoD-accredited ‘Trusted Source’
Product Solutions Technical Details:
SEMI highlights the need for InP and GaAs
The organisation says that the restriction of the use of indium phosphide and gallium arsenide would have a negative impact on the semiconductor industry and Europe as a whole. SEMI has also described a new directive which will bring down patent application costs
According to Heinz Kundert, president of SEMI Europe, being able to quickly identify and seize the potential offered by new technologies and new markets is critical in the semiconductor industry. Keeping track of public policy developments is equally important.
Decisions made in a national Ministry or an EU institution can have a direct impact on the industry.
A new EU patent procedure, to be introduced by mid- 2014, will significantly reduce the cost and time for a company to obtain a patent valid across 25 European states. The outcomes of the current review of substances under European EHS rules, for example, may have an impact on industry’s research priorities or its access to the EU market.
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