28 GaAs will fend off silicon


CMOS in handset front-ends Talk of silicon completely displacing GaAs in the RF front-end of cellular phones is premature. The future will instead involve smart RF suppliers collaborating closely with OEMs and chipset partners to offer complete RF solutions.


32 Efficient power conversion


with package-free HEMTs Packaging has its downsides: It increases the footprint and the price of a power MOSFET, while degrading its performance through unwanted increases in resistance and inductance. The best solution is to ditch the package, a step that allows GaN HEMTs to be cost-competitive with silicon incumbents.


36A mixed year for III-V shares If you were to have made money in the last 12 months


from III-V shares, would you have had to invest in the RF sector, in toolmakers, or in the makers of laser chips? Or was it more important to identify the right company, rather than the burgeoning sector?


41 Ultra-low power VCSELs for optical networks


It is essential that tomorrow’s optical networks are built with more efficient components. One promising device that will help is a 1310 nm VCSEL formed by fusing together active regions grown on InP wafers and mirrors formed on GaAs substrates.


46 Partnership propels multiple


improvements in SiN deposition Investors in deposition equipment want tools that have high levels of up time, deliver uniform films and offer an upgrade path that will prevent them from becoming obsolete within a few years. The equipment vendor and chipmaker must work together to improve the deposition system and its process.


52 Scrutinizing AlGaN/GaN


heterostructures atom by atom Conventional imaging techniques, such as various forms of electron microscopy, are incapable of delivering three-dimensional atomic resolution that can offer new insights into the characteristics of GaN-based heterostructures. But this type of measurement is possible with atom probe tomography.


News Analysis 18 Materials research thrives as CPV industry stalls 21 LEDs: The next dimension? 22 Lighting the roads to Russia 24 Toshiba serves up SiC diodes for starters 26 AlN substrates: Bigger and better


Research Review


59 Researchers ‘unambiguously assign’ LED droop to Auger processes


60 Shallow wells bolster green LED emission 61 Nickel enhances graphene contacts


News: 07 IR Commences shipments of GaN-on-silicon devices 08 Soraa threatens to end halogen’s reign 09 Anadigics’ InGaP technology powers Samsung Galaxy S4 10 IQE Releases 150mm GaN-on-SiC 12 Mesuro can extract data from non- linear devices 13 SiC rescues the power device market 14 TriQuint’s GaN-on-diamond technology is cutting edge 15 UV LED technology extends food life 16 Cree’s SiC module delivers higher performance 17 Osram leads LED project to serve many markets


28


Magazine & Front Cover: Designed by Mitch Gaynor June 2013 www.compoundsemiconductor.net 5


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