TECHNOLOGY VCSELs “
Results show that our wafer-fused VCSELs are ready for entering the
rapidly growing market of 40GBASE-LR4 transceivers for data centres and telecom local area networks. It is clear to us that the telecom industry is set to benefit from the unique opportunity offered by this new generation of un-cooled 10 Gbit/s 1310 nm communication lasers
Results on more recent devices are even more promising. For VCSELs operating at 10 Gbit/s at a bias current of 7 mA, the predicted time to 1 percent failure at 70°C is now 50 years. Thanks to this progress, our wafer-fused VCSELs largely meet the telecom industry requirements for the time to 1 percent failure, which is more than 10 years at 70°C (see Figure 7).
These results show that our wafer-fused VCSELs are ready for entering the rapidly growing market
”
Figure 7. On recent devices that operate at 10 Gbit/s at a bias currents of 7 mA, the predicted time to 1 percent failure at 70°C increases to 50 years
Figure 5. While with currently developed VCSELs, 10 Gbit/s operation can be achieved at a constant bias current of typically 7 mA in the full temperature range from 0°C to 85 °C, with standard DFBs the bias current needs to be constantly adjusted depending on the ambient temperature (eye diagrams above for 20°C). 10 Gbit/s operation at a bias current at or below 7 mA allows the application of very low power consumption VCSEL driver arrays that were developed for short wavelength (<1µm) datacom VCSELs
of 40GBASE-LR4 transceivers for data centres and telecom local area networks. It is clear to us that the telecom industry is set to benefit from the unique opportunity offered by this new generation of un-cooled 10 Gbit/s 1310 nm communication lasers, which can reduce the cost and the power consumption of 40 Gbit/s modules to the level of 10 Gbit/s modules existing today.
One of the most promising opportunities for these 40GBASE-LR4 1W transceivers is as replacements for the 1 W QSFP packages, which are standard modules normally employed in the switching racks of data centres. If this upgrade is made, it is a very efficient way to considerably increase the throughput of existing data centres.
Although, like with any new technology, there are always concerns associated with the adoption of any new class of device, those that make the leap promise to slash the power consumption of their transceivers, and help to reduce the escalating energy costs associated with internet traffic.
Figure 6. Using the aging parameters of the first generation devices that can be modulated at 10 Gbit/s at 9 mA bias current, one can predict time to 1 percent failure of 291 years and 19 years at 25°C and 70°C ambient temperatures, respectively
44
www.compoundsemiconductor.net June 2013
© 2013 Angel Business Communications. Permission required.
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