This page contains a Flash digital edition of a book.
news digest ♦ RF Electronics


be restricted. The European Commission will then decide on banning these substances under RoHS, the transition periods allowed for the manufacturing supply chain to adjust and start considering necessary exemptions.


The SEMI RoHS working is actively contributing to the drafting of the review methodology. For further information and to contribute to this work, please contact Sanjay Baliga at sbaliga@semi.org


EU Conflict Minerals Debate is Launched – Potential Impact on Industry’s Sourcing of Raw Materials from Conflict Zones


The EU is now also considering whether it needs to adopt EU measures to support responsible sourcing from conflict-affected or high-risk areas. It is not yet clear what minerals or what countries a possible EU initiative would focus on, nor whether its nature would be voluntary or binding. The question is also raised whether EU measures should address specific end-products or downstream industry sectors.


A number of initiatives on conflict minerals already exist, including the OECD guidelines on due diligence and the EU is looking to build on these and reinforce transparency through the supply chain. In the U.S., the Dodd-Frank act requires companies to report annually whether they or their suppliers are using conflict minerals (tin, tungsten, tantalum and gold originating from the Democratic Republic of Congo or an adjoining country) and the EU is seeking feedback on how these provisions are working in practice.


The adoption of an EU legislative measure would have significant implications for SEMI members, creating a traceability requirement across the entire manufacturing supply chain. The consultation is available online here – deadline for submissions is 26 June 2013. For further information, please contact gourania@semi.org


Further information on SEMI advocacy activities in Europe and on the SEMI Europe Advocacy Partners program can be obtained from Rania Georgoutsakou (gourania@semi.org; +32 2 609 5334) or Heinz Kundert (hkundert@semi.org).


Peregrine Introduces RF Switch for Wireless Infrastructure Market


SPDT switch promises increased network capacity and higher data rates


Peregrine Semiconductor Corporation, a fabless provider 120 www.compoundsemiconductor.net June 2013


of high-performance radio frequency integrated circuits (RFICs), has announced availability of what the company says is the industry’s highest-isolation SPDT RF switch for the wireless infrastructure market.


The UltraCMOS based PE42420 RF switch has high isolation of 64 dB @ 4 GHz—an approximately 20% increase over competing devices on the market. Additionally, the switch features HaRP technology enhancements to deliver high linearity, with an IIP3 of 65 dBm. By providing high linearity and isolation in a single, small package, the PE42420 switch simplifies Digital Pre- Distortion (DPD) loop design, which reduces cost and shortens time to market. This high-performance switch enables increased network capacity and higher data rates in infrastructure applications such as Base Station Transceiver Systems (BTSs), Remote Radio Heads (RRHs), and wireless backhaul; as well as Industrial, Scientific and Medical (ISM) band devices that operate in the 2.4 GHz and 5.8 GHz frequencies.


“As we enter a period of major mobile broadband capacity upgrades, network equipment vendors are challenged to provide mobile operators with flexible, backward-compatible solutions to replace 2G and 3G network products with LTE-ready systems that are capable of supporting multiple standards,” said Mark Schrepferman, director of the communications and industrial product line for Peregrine’s High-Performance Solutions business unit. “At the same time, the demand for higher data rates is requiring improved network performance, which we believe is driving market needs for high-isolation and high-linearity RF components. The PE42420 switch enables equipment vendors to meet these network modernization challenges.”


In order to maximize network performance in next- generation wireless communication systems, high port- to-port isolation is required, to prevent the output signal from spilling into adjacent radio channels or bands. Additionally, because the DPD receiver is shared by multiple Power Amplifiers (PAs) in these systems, high isolation between the multiple paths ensures that the PA that is being sampled is not contaminated by other signals. The 0.1 to 6 GHz PE42420 switch supports 1.8V control logic, enabling the use of lower-voltage, and lower-power, microcontrollers. ESD tolerance of 2kV HBM on all pins eases manufacturing and results in higher reliability of the end product.


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191