Equipment and Materials ♦ news digest
The SIMS Workstation Plus has the most comprehensive specification with the addition of the IG5C Caesium ion gun for electronegative species, having a spot size of just 20 µm.
for radial analysis of growth conditions. It provides wafer bow and temperature measurements, as well as simultaneous detection of growth rate and surface morphology.
The MASsoft Professional SIMS PC data system provides automated measurement of positive and negative ions and of neutral species. It enables full control of the mass spectrometer and ion gun operating parameters and ion beam raster, with acquired data presented in real time.
The ESM LabVIEW SIMS Imaging program acquires, stores and displays the data for presentation in the form of elemental surface maps with both 2D and 3D view capabilities.
Times for analysis are down to just 150 milliseconds.
IMRE uses LayTec tool for 200mm GaN-on-silicon
The EpiCurve Triple TT in-situ monitoring system is being used to develop epiwafers for InGaN/GaN LEDs and GaN power electronic devices
In his invited talk at the LED Technology Forum in Singapore Sudhiranjan Tripathy of IMRE (Institute of Materials and Research Engineering, A*STAR revealed the latest results of GaN growth on 200 mm diameter silicon.
The conference took place between 7th and 10th May.
Tripathy’s team uses LayTec‘s in-situ monitoring system EpiCurveTriple TT to develop epiwafers for InGaN/GaN LEDs and GaN power electronic devices.
EpiCurve Triple TT is ideally suited for 200 mm real time wafer characterisation because of its 3 sensor heads
Fig. 2: 405 nm reflectance (left) of InGaN/GaN MQW stacks and the corresponding STEM image of the MQWs (right).
According to Tripathy‘s team, LayTec in-situ metrology is a key element for identifying the epitaxial process spotentials. In comparison to the time consuming, destructive ex-situ cross section transmission electron microscopy analysis, the in-situ tool provides real time information on growth thickness and homogeneity already during growth.
LayTec says its system has reduced significantly IMRE‘s R & D cycles for epitaxial growth optimisation and enables faster industrialisation of the GaN-on-Silicon technology.
June 2013
www.compoundsemiconductor.net 171
Fig. 1: Reflectance monitoring of AlGaN/GaN HEMT structure grown on 1.0 mm thick 200 mm diameter Si (111) at IMRE: blue - 405 nm, green - 633 nm, red - 950 nm
Fig. 1 shows reflectance profiles at 3 wavelengths: 950 nm for emissivity correction of pyrometry, 633 nm for analysis of thick layers e.g. GaN buffer, and 405 nm for thin layers. Fig. 2 demonstrates how the 405 nm reflectance is used for individual in-situ tuning of each well and barrier within the multiquantum wells stack.
The in-situ signal (Fig. 2 - left) perfectly corresponds with the multi-quantum wells (MQWs), which can be seen in the scanning transmission electron microscopy (sTEM, Fig. 2 - right).
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