news digest ♦ Power Electronics
2016. It supports projects and programmes that lever private sector investment to create economic growth and sustainable employment.
The first three rounds will generate over £13 billion of private sector investment and create or safeguard over 500,000 jobs. The fourth round of RGF will make a further £350 million available in the pot and bidding has now closed. For more information please go to:
www.gov. uk/understanding-the-regional-growth-fund
Round 4 closed on 20th March. Over 300 bids have been received in Round 4, competing for a share of £350 million. Bids are being appraised and results will be announced in the summer. A regional summary of bids received in this round was published on 5th April 2013.
process platform, which has been in volume production since 2009. One hundred NPT1015 devices from four wafers were subjected to a 15:1 VSWR at all phase angles with 90°C base plate temperature.
During VSWR testing, all devices operated in a saturated average power condition driven by a 4000 carrier 200MHz wideband signal with a 19.5dB peak-to-average ratio. The devices showed 100 percent survivability and only ~ 0.2dB average change in saturated output power.
Nitronex process creates industry’s toughest GaN transistor
The firm has qualified its gallium nitride transistor for military and satellite communications, broadband, RADAR, wireless and point to point microwave applications
Nitronex, a designer and manufacturer of GaN based RF solutions for the defence, communications, cable TV, and industrial & scientific markets, has fully qualified the robust NPT1015 transistor.
“The NPT1015 is a robust next-generation product, as it incorporates significant thermal management improvements that increase breakdown and lowers thermal impedance. We are using these same techniques in our new 48V product line. Nitronex is very excited about the advancements in product robustness and reliability that put our GaN-on-Si devices on par or ahead of competitive products that primarily use GaN-on- SiC,” says Greg Baker, president and CEO at Nitronex.
Nitronex says its patented SIGANTIC GaN-on-Silicon process is the only production qualified GaN process using an industry standard 4” silicon substrate. This results in a robust, scalable supply chain and positions Nitronex well for the growth expected from emerging GaN markets such as military communications, broadband, RADAR, commercial wireless, satellite communications and point to point microwave.
Fully qualified NPT1015 transistors are now available from stock to 12 weeks, and can be purchased through the Nitronex sales channel and distribution.
SPTS & QMF unite to grow SiC on 300mm silicon
The aim of the joint project is to provide a cost-effective buffer material to enable fabrication of gallium nitride (GaN) devices on silicon substrates
The NPT1015 is a 28V, DC-2.5GHz, 50W power transistor with 15dB saturated gain and 65 percent peak drain efficiency at 2GHz.
The thermal resistance of the NPT1015 transistor is 1.9°C/W, which is among the lowest in the industry in this power class. This GaN technology is capable of surviving the industry’s most severe robustness tests without significant device degradation.
Developed under an entirely new design process, the NPT1015 leverages Nitronex’s existing 28V NRF1
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www.compoundsemiconductor.net June2013
The Queensland Micro and Nanotechnology Facility (QMF) of Griffith University and industry partner SPTS Technologies have announced the epitaxial growth of 3C SiC films on 300mm silicon wafers.
This breakthrough is the result of over 10 years research at QMF on low temperature SiC deposition on silicon and the joint development by QMF and SPTS of a commercial reactor to extend the epitaxial growth process to commercial scale production of SiC coated silicon wafers.
The ultimate target of the joint project is to provide a cost-effective buffer material to enable fabrication of GaN
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