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www.us-tech.com
July, 2014
POET’s Breakthrough Leap to End Moore’s Law Limits
Continued from page 1
3528 Torrance Blvd., Suite 100 Torrance, CA 90503 Phone: (310) 540-7310 Fax: (310) 540-7930
1580 Boggs Road, #900 Duluth, GA 30096 Phone: (770) 446-3116 Fax: (770) 446-3118
full range of electrical and optical ac- tive and passive circuit components. POET-based devices have the poten- tial to provide very high performance vs. existing silicon-based devices (up to 100X faster) with very low power consumption, up to 80 percent less than existing silicon devices. The POET process is much more versatile than legacy hybridized fabrication of compound semiconductor devices (GaAs, InP, others) and can be imple- mented using existing CMOS chip- making equipment. POET will be fully compatible
with existing semiconductor design and manufacturing flows, allowing unprecedented integration of func- tions that take multiple chipsets to- day into a single chip for large com- ponent cost reduction, and — particu- larly for optics — tremendous (~80 percent) reduction in assembly and test costs. This breakthrough has been
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achieved by turning to strained In- GaAs quantum wells with indium concentrations of 70 percent or more; mobility and channel velocity increas- es, and operation of the circuit at 0.3 V, should enable up to a ten-fold gain in performance and up to 80 percent lower power requirements compared to a silicon-based CMOS IC.
18 Years of R&D Development of this technology
started in the early 1990s in the labs at the University of Connecticut. Since then, more than 18 years have been devoted to developing and prov- ing out numerous components of the platform by POET’s Chief Scientific Officer and Director Dr. Geoff Taylor and his team. POET’s business mod- el is to license the III-V semiconduc- tor process technology IP to cus- tomers and foundry partners to en- able designs, to produce devices that include analog, digital and optical functions on the same die for a vari- ety of markets including, but not lim- ited to, hand-held smartphones and tablets, PCs, servers, data centers, military and industrial applications. With this technology, the com-
patibility issue between transistors and the optical devices disappears, and it is possible to form high mobil- ity channels for both the n-type and p-type transistors. One challenge had been the assumption that these high-mobility materials have to be introduced on a silicon substrate. In our case, we use substrates made of GaAs. These are currently available in diameters up to 200mm, and there is no fundamental barrier to the pro- duction of 300mm equivalents which is a commercial foundry standard. Our preferred growth technique for depositing III-V layers on this foun- dation is molecular beam epitaxy (MBE), and this can be applied to substrates of this size. Tier 1 fabs al- ready use this approach to deposit material on 300mm wafers, so the only barrier to a switch of substrate is cost, not availability of the technol- ogy. Differences between the price of silicon and GaAs substrates will shrink as shipments of the latter rise, and costs could be further re- duced through innovations in sub- strate release techniques. The POET fabrication process employs most of the same set of foundry tools current- ly used for silicon CMOS, so minimal
reconfiguration is required. The idea of using GaAs rather
than silicon to make digital circuits is not new. During the nMOS era that spanned the 1970s and early 1980s, GaAs MESFET technology was a contender for silicon E/D logic applications. And later, during the development of CMOS, the GaAs HEMT was also considered for high- speed logic circuits. The key differences to the pres-
ent technology are that we are now able to integrate both electronic GaAs devices with optical GaAs de- vices, and we have substituted opti- cal interconnect to eliminate long metal interconnects. Furthermore, in contrast to oth-
er technologies that are trying to go beyond the silicon CMOS barriers, the POET approach uses convention- al fab processes to produce its devices together with MBE wafers, the only epitaxial technique to provide preci- sion doping, thickness control and laser quality. A significant capability of the
technology is that the epitaxial process is unmatched in its ability to realize self-assembled quantum dots. Although not a current objective, it turns out that the modulation-doped interface formed with this technolo- gy, which is a normally off channel, is ideal for the implementation of the single-electron transistor. This form of transistor can access engineered quantum dots at the interface, which have quantum levels differentiated by spin. It is possible that these sin- gle-electron transistors could aid the development of quantum computing, with electron spin providing the quantum variable to form quantum computing logic blocks.
Moore’s Law Revoked For almost 50 years, Moore’s
Law has dictated the pace of techno- logical change. As the number of transistors on a chip double approxi- mately every 1.5 to 2 years, this in- creases the performance capabilities of computing devices and the many functions they make possible. Unfor- tunately, with present silicon-based integrated circuits and manufactur- ing processes, performance and cost improvements under Moore’s Law are increasingly unsustainable, and will soon come to an end. These physical limitations will
increasingly impede electronics man- ufacturers from continuing to build smarter, faster, more efficient and cheaper devices — including sensors, lasers and computing devices. By integrating optics and elec-
tronics onto one monolithic chip, PO- ET expects to provide its customers with new direction that is no longer strait-jacketed by the limitations of silicon technology. See also Compound Semicon-
ductor’s magazine (June 2014, page 52-57). The digital edition can be found directly on Compound Semi’s digital edition page here:
www.com-
poundsemiconductor.net/csc/maga- zine.php.
Contact: POET Technologies,
Suite 501, 121 Richmond Street West, Toronto, Ontario, Canada M5H 2K1 % 416-368-9411 fax: 416- 861-0749 or PO Box 555, Storrs-Mansfield, CT 06268 USA % 212-889-4350 fax: 401-295-4389 Web:
www.poet-technologies.com/ r
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