news digest ♦ compound semiconductor ♦ industry news
local government to attract investment, particularly MOCVD subsidies have effectively promoted China market entrance of more mainstream LED chip enterprises from Taiwan, U.S and other regions.
Secondly, in addition to the enormous market potential of future general lighting, new application fields have been continuously developed. Meanwhile, the existing applications markets keep growing mature.
In China, there will always appear to be a market rush as soon as a new industry emerges, such as PV businesses, not to mention the LED industry. The number of LED chip plants has soared since over a year ago, thus increasing the proposed number of MOCVD reactors.
Meanwhile, most companies have little understanding of the status quo of China’s LED chip manufacturers, for instance, the number of LED chip enterprises and the planned number of MOCVD tools in each one, the forecast of MOCVD market volume, etc.
A lack of accurate investigation into China’s LED chip industry has resulted into blind industry entrances and over optimism about the planned MOCVD number of many manufacturers.
Finally, a lack of related technology talents turns out to be inevitable. Because of the unexpected increase of China’s LED chip enterprise, most of which have MOCVD introduction plans, the shortage of R&D personnel related to epitaxial wafer production will become a great challenge. Personnel will play an important role in the future market competition between China’s LED chip enterprises.
Cree Extends Portfolio to 150mm Silicon Carbide Substrates
The significant size advancement of single crystal SiC substrates from 100mm to 150mm will enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.
Cree has achieved a major breakthrough in the development and wide scale commercialization of Silicon Carbide (SiC) technology with the demonstration of high quality, 150mm SiC
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www.compoundsemiconductor.net August/September 2010
substrates with micropipe densities of less than 10/ cm(2). The current Cree standard for SiC substrates is 100mm diameter material.
SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications. The significant size advancement of single crystal SiC substrates to 150mm can enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.
“Cree’s achievement of 150mm SiC substrates further demonstrates Cree’s leadership in SiC materials technology,” said Vijay Balakrishna, Cree Materials product line manager. Steve Kelley, Cree chief operating officer, added, “We expect that 150mm substrates can reduce device cost, boost manufacturing output and expand our product range”.
Cree is one of the companies leading the LED lighting revolution and setting the stage to obsolete the incandescent light bulb through the use of energy-efficient, environmentally friendly LED lighting. Its product families include LED fixtures and bulbs, blue and green LED chips, high- brightness LEDs, lighting-class power LEDs, power-switching devices and radio-frequency/ wireless devices. Its products are used in general illumination, backlighting, electronic signs and signals, variable-speed motors, and wireless communications.
SPTS & BluGlass Sign JV to Commercialize RPCVD Growth
The JV is focused on developing and commercializing BluGlass’ proprietary Remote Plasma Chemical Vapor Deposition (RPCVD) technology to grow materials including GaN and AlGaN at low cost.
Australian green technology innovator BluGlass Limited has entered a Joint Venture (JV) agreement with SPTS, a global supplier of advanced capital equipment and process technologies for the semiconductor and related device industries.
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