product news ♦ compound semiconductor ♦ news digest Vishay’s White InGaN LED is Ultrabright
The company’s VLHW4100 3mm module achieves non-diffused luminous intensity ranging from 4,500 mcd to 11,250 mcd at 20mA.
Vishay Intertechnology, is marketing a new white, non-diffused 3-mm LED optimized for high-end applications with extreme luminous intensity requirements.
Utilizing ultrabright InGaN technology, the VLHW4100 features a high luminous intensity from 4,500 mcd to 11,250 mcd at 20 mA.
inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets.
Plasma-Therm Announces VERSALINE® RIE Etch Order
Plasma-Therm LLC, a global supplier of plasma etch and deposition process equipment, is pleased to announce that a leading manufacturer of high technology defense systems from the EMEA region has recently accepted delivery of a VERSALINE® RIE etch system.
The LED features a clear, untinted plastic case with a lens and viewing angle of 22.5 degrees, and high light output and visibility performance. With its luminous intensity, the VLHW4100 provides an alternative to incandescent lamps and is intended for a wide range of general and consumer applications, including interior and exterior lighting, outdoor LED panels, light guides, and instrumentation and front panel indicators.
The VLHW4100 offers low thermal resistance down to 400 K/W and power dissipation up to 95 mW. Featuring a 22.5 deg. angle of half intensity, the device is luminous categorized, per packaging unit, for luminous intensity and color. ESD-withstand voltage for the LED is up to 2 kV, in accordance with JESD22-A114-B. The device is compliant to RoHS directive 2002/95/EC.
Samples and production quantities of the new VLHW4100 LED are available now with lead times of eight weeks for larger orders.
Vishay Intertechnology is one of the world’s largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors,
This leading international manufacturer designs, develops and produces high technology defense systems for aerospace, naval and land-based applications. The VERSALINE system, which complements other Plasma-Therm process equipment at this facility, was selected for its proven reliability and reproducibility during the fabrication of devices for mission critical components. Low maintenance and process flexibility makes the VERSALINE RIE ideally suited for multiple device fabrication steps and provides the defense industry with a valuable asset for R&D and production.
The system is configured to enhance processing technology with features including EndpointWorks™ developed by Plasma-Therm. Integration of EndpointWorks with the system’s control software provides real-time in situ process data and reproducibility.
“The VERSALINE platform has the ability to support a number of different technologies,” states Dr. David Lishan, Director of Technical Marketing at Plasma-Therm. “Leading high tech companies rely on VERSALINE systems as vital elements in their device development activities for production. With systems that operate reliably and deliver consistent, industry leading results we are able to develop long- term partnerships with our customers.”
Plasma-Therm LLC is a U.S. based supplier of advanced plasma process equipment that serves various specialty markets including MEMS, photomask, solid state lighting, thin film head and compound semiconductor. The VERSALINE system
August/September 2010
www.compoundsemiconductor.net 129
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179 |
Page 180 |
Page 181 |
Page 182 |
Page 183 |
Page 184 |
Page 185 |
Page 186 |
Page 187 |
Page 188 |
Page 189 |
Page 190 |
Page 191 |
Page 192 |
Page 193 |
Page 194 |
Page 195 |
Page 196 |
Page 197 |
Page 198 |
Page 199 |
Page 200 |
Page 201 |
Page 202 |
Page 203 |
Page 204 |
Page 205 |
Page 206 |
Page 207 |
Page 208 |
Page 209 |
Page 210 |
Page 211 |
Page 212 |
Page 213