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Microsemi Targets Radar Market With 2200W SiC Transistor
The firm is marketing its highest power SiC RF power device, the 0405SC-2200M, for UHF radar applications.
Microsemi Corporation a global manufacturer of high performance analog mixed-signal integrated circuits, high reliability semiconductors and RF subsystems, has revealed a new 2,200 watt peak RF power silicon carbide transistor.
Extending its market leading portfolio of silicon carbide (SiC) devices for high power UHF Band pulsed radar applications, the new l 0405SC-2200M device supports next-generation UHF pulsed radar designs.
The series of SiC transistor options features 100 watts, 500 watts, 1,000 watts, 1,500 watts and now 2,200 watts for both weather and long range over- the-horizon radar applications.
“We are excited to be the market leader in silicon carbide broadband transistors designed specifically for the UHF radar market,” said Charles Leader, Microsemi RFIS Vice President. “This 2,200 watt device results from our long-term commitment to the military and aerospace markets, aggressively investing in SiC technology. In addition to supporting next-generation UHF designs, we’re developing high pulsed power SiC transistors for both L-Band and S-Band radar systems. Our initial L-Band devices are scheduled for demonstration this fall,” he said.
The 0405SC-2200M transistor is a Generation 3 Chip in its geometry, materials, processing and packaging. It is designed in a single-ended package for common gate 2,200 watt Class AB performance in the UHF frequencies from 406 MHz to 450 MHz. A hermetically sealed package built with 100% high temperature gold metallization and wires provides highest reliability and improved system yields. Its advanced SiC design provides state-of-the- art power in the industry’s smallest transistor and circuit size for the specified frequency range.
Additional system benefits include simplified impedance matching, a high 125 volt operating voltage that drastically reduces power supply size and dc current demand, low conducting current
minimizing system noise, and the industry’s highest peak power for reduced system power combining – 4 way combination yields 8 kW with margin.
0405SC-2200M features include:
* Designed for 406-450 MHz UHF Radar * Medium Pulse 300 us, 6% Format * 2,200 Watt Output Power * Typical Power Gain Greater than 8 dB * Drain Efficiency: 55% at 450 MHz * Typical Compression: 1.0 dB * Vdd: +125V * Rugged VSWR-T 10:1 Capability
Demo units are available now by contacting the factory directly or by emailing
sic@microsemi.com .
Fujitsu First to Market Full Line-up of LED Displays
The firm’s entire monitor range has been refreshed with sleek, power-saving LED displays.
Fujitsu claims to be is the first manufacturer to market a full range of slimline, power-saving monitors that feature the newest LED display technology. Providing unbeaten dynamic contrast for flat-screen monitors, Fujitsu is introducing a choice of LED displays ranging from the economy 19-inch to the wide-screen 27-inch model.
Offering an improved viewing experience for everything from a spreadsheet through to an action- packed movie on Blu-ray, the new SL and L line LED displays from Fujitsu deliver deeper contrasts and richer, more realistic colors.
Making the switch from CCFL (cold cathode fluorescent lamps) to LED (light-emitting diode) backlighting for flat-screen displays is also easy on the environment. LED backlighting consumes less power, providing energy consumption savings of up to 46 %, and allows the complete phase out of the hazardous substance mercury from the manufacturing process. The thinner displays allow raw material use during manufacturing to be cut by around 25 percent, and they are lighter and smaller to transport.
Fujitsu is initially launching two lines of ultra-high contrast LED displays, while LED lighting for a
August/September 2010
www.compoundsemiconductor.net 159
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