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RF720x product family reduces customer test times related to calibration, further lowering total system costs while also accelerating time-to-market.
Eric Creviston, president of RFMD’s Cellular Products Group (CPG), said, “RFMD’s innovative new RF720x product family represents the next- generation of discrete 3G power amplifiers for smart phones and 3G devices. RFMD’s RF720x product family helps smart phone manufacturers significantly enhance the consumer experience by extending battery life and enabling smaller device form factors. The RF720x product family also lowers our customers’ total system costs and helps to maximize customer-level factory throughput by minimizing design cycle times and test times.
“We are particularly excited about new smart phone programs we are supporting in Korea and China, and we look forward to ramping new design wins in the near-term in Europe and North America.”
RFMD’s RF720x product family includes nine high performance PAs designed for smartphones and 3G devices implementing mode-specific, band-specific front end architectures. The RF720x product family accommodates all major WCDMA/HSPA+/ TD-SCDMA bands and band combinations and is optimized for seamless operation with reference designs from Qualcomm and other leading open market 3G chipset suppliers.
RFMD’s 3G product portfolio accommodates all major RF architectures, including existing mode- specific/band-specific and mode-specific/multi-band architectures as well as emerging multimode/multi- band, converged architectures. RFMD also supplies a broad portfolio of switch-based components optimized for smart phones and 3G devices, providing a comprehensive RF product portfolio covering the entire cellular front end.
Tektronix High-Speed Oscilloscopes Use SiGe Technology
IBM 8HP Silicon Germanium (SiGe) technology has enabled Tektronix oscilloscope performance speed increases beyond 30 GHz.
Tektronix, a leading manufacturer of oscilloscopes, has announced that its next-generation, scalable,
performance oscilloscope platform will make broad use of IBM 8HP silicon germanium (SiGe) technology.
Tektronix helps engineers around the world to speed debug and test future designs. The 130nm SiGe bipolar complementary metal oxide semiconductor (BiCMOS) foundry technology offers 2x performance over the previous generation -- and targets delivery of oscilloscopes with real-time bandwidth beyond 30 GHz.
“Tektronix has a long history of co-innovation with IBM and the inclusion of SiGe technology in our products has enabled us to deliver a portfolio of world-class, award-winning instruments that help solve some of the most demanding customer challenges,” said Brian Reich, general manager, Performance Oscilloscopes, Tektronix. “SiGe’s performance and the reliability and stability of IBM’s SiGe manufacturing capability will enable our next generation oscilloscope to achieve greater than 30 GHz acquisition capability for growing customer needs in the computing/communications industries.”
IBM claims to be the first company to introduce silicon germanium IC technology into mainstream manufacturing in 1998. By 2000, Tektronix announced the delivery of the TDS7000 Series real-time oscilloscopes, the fastest commercially available oscilloscopes at the time, powered by IBM’s flagship SiGe 5HP technology. Today, Tektronix continues to utilize industry-leading IC technology from IBM with its fourth-generation SiGe 8HP.
SiGe semiconductors leverage highly-reliable and mature fabrication processes associated with the 50-year-old silicon industry, but with performance levels comparable to that of other compound semiconductors such as Indium Phosphide (InP) and Gallium Arsenide (GaAs). Unlike those alternatives, SiGe BiCMOS provides access to high-speed bipolar transistors on the same die as standard CMOS, enabling a class of circuitry which marries extreme performance with large- scale integration. It is this union which has allowed Tektronix to reliably deliver feature-rich, high-speed data acquisition systems for over a decade.
“For nearly 15 years, Tektronix has worked closely with our engineering team to fully realize the potential of SiGe technology,” said Bernie
August/September 2010
www.compoundsemiconductor.net 147
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