news digest ♦ compound semiconductor ♦ product news


* 300+ lumens at 1000 mA * 220+ lumens at 700 mA * 125+ lumens at 350 mA


CCT 4100K and 5650K Typical forward voltage 2.85-3.10 V


The level of control and performance afforded by LUXEON Rebel ES is claimed by Lumileds, to be significantly beyond what’s possible with conventional sources. It should also shorten payback periods, and minimize ownership costs for customers deploying these lighting solutions.


Implementing energy efficiency continues to be recognized as the simplest and most direct route to reducing green house gases and reducing the environmental impact of energy consumption around the world, In China, North America, and Europe in particular, the implementation of LUXEON Rebel ES based lighting solutions helps governments, utilities, and facility owners achieve their ‘green’ objectives and significantly reduce their operating costs.


LUXEON Rebel ES emitters are fully stocked and available immediately from Future Lighting Solutions around the world. The product brief, datasheet, and technical resources are available from Future Lighting Solutions, Philips Lumileds, or by contacting an account manager.


Nitronex Reveals 2nd Generation GaN Transistor for Military Applications


The thermally enhanced NPT1012 power transistor should meet the growing demand for wideband, high power and robust RF power amplifiers.


Nitronex, a designer and manufacturer of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, and industrial & scientific markets, is marketing its NPT1012, a thermally-enhanced 25W device for applications from DC to 4 GHz.


Nitronex says the NPT1012 is the first transistor to be released as part of this second generation platform which was developed to meet the growing


158 www.compoundsemiconductor.net August/September 2010


demand for wideband, high power and robust RF power amplifiers required by the military communications, jammers and radar market segments.


“The new NPT1012 25W GaN power transistor has been designed specifically to improve broadband power performance by addressing thermal management. Designers can use the NPT1012 transistor to develop compact, multi-octave power amplifiers thatsimultaneously meet RF and thermal requirements”, stated Gary Blackington, VP of Sales and Marketing.


“The NPT1012 will be well suited for applications that require wide bandwidth, high efficiency and low thermal resistance. This device will be our second generation 25W discrete GaN RF transistor that has a pedigree of being used in the most highly advanced and widely used tactical radios in the world,” added Blackington.


“Thermal optimization requires attacking the problem from every angle. We made improvements in the full thermal stack from the die itself to packaging and assembly,”said Ray Crampton, VP of Engineering. “With these enhancements, we achieved a 25% reduction in thermal rise in our customers’ applications.”


The NPT1012 provides more than 20W of output power and over 50% drain efficiency in a broadband application circuit across 1 to 2.5 GHz. It is available in a thermally-enhanced air cavity bolt- down package, is lead-free and RoHS compliant.


The NPT1012 is now available in production quantities from stock to 16 weeks lead time through Nitronex’s standard sales channels.


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