news digest ♦ RF Electronics
bands 5, 6 & 8. Its scalability from dual-band to penta-band applications addresses the demand for mid to high-end feature and smartphones. Enabled by TriQuint’s CuFlip technology, the broadband PAM inherently manages heat in a remarkably small form factor, 5 x 4 x 1mm3.
Complementary to TQM7M9070, TriQuint offers a highly-efficient quad-band power amplifier module, the TQM7M5022R, for GSM/EDGE to support a complete amplification solution for any cellular multimode/multiband application.
TriQuint will showcase its platform solutions at the telecommunications industry’s largest annual gathering, GSMA Mobile World Congress, in Barcelona, Spain 14 - 17 February, 2011.
With a broad technology portfolio, and expertise in high-volume manufacturing, TriQuint creates standard and custom products using gallium arsenide (GaAs), gallium nitride (GaN), surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies.
IQE Supporting TriQuint for GaN Development
The initial work will target defence applications but it is anticipated that the technologies will eventually migrate to future generations of consumer and communications devices.
IQE ‘s manufacturing facility in Somerset, New Jersey will support TriQuint Semiconductor with a range of GaN based wafer products following its recent award of a US Air Force Research Laboratory (AFRL) contract.
TriQuint has been awarded by the U.S. government with the “Defence Production Act Title III gallium nitride (GaN) manufacturing development “ contract. The overall goal is to increase yields, lower costs of high power, high frequency 100mm Gallium Nitride (GaN) wafers and improve time-to-market cycles for defence and commercial GaN integrated circuits.
Gallium nitride is leading advanced semiconductor amplifier design for high-end radio-frequency (RF) communications applications. The material system has inherent advantages over other technologies
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www.compoundsemiconductor.net January / February 2011
including high voltage operation, greater power density (more power per square millimetre) and efficiency. The on-going development of GaN-based devices is leading to new smaller, more efficient amplifiers aimed at reducing system size, weight and power consumption.
Alex Ceruzzi, VP and General Manager of IQE’s New Jersey facility commented:
“IQE is proud of its close working relationship with TriQuint Semiconductor in supplying reliable, high- quality products ranging from high volume GaAs based RF materials to emerging technologies such as 100mm GaN epitaxial wafers. We appreciate TriQuint’s continued commitment in selecting IQE to support this key programme.”
The programme is expected to conclude in 2013 and is divided into three phases with specific goals and assessment criteria at each milestone. The overall aim of the new contract is to demonstrate integrated device technology that meets stringent goals in terms of performance, cost and capacity. Whilst the initial work will be designed for defence applications, it is anticipated that the technologies will eventually migrate to future generations of consumer and communications devices.
CMP Chooses TriQuint as GaAs Foundry Services Partner
The agreement gives CMP’s university customers access to TriQuint’s GaAs foundry processes.
Circuits Multi-Projects (CMP) has selected TriQuint’s TQP15 for its GaAs foundry process technology for universities and small companies.
Since 1981, CMP, an independent non-profit organisation, has helped more than 1000 organisations from 70 countries to access affordable commercial foundries by consolidating their designs onto a single prototype mini-tile. CMP works with several foundry vendors supporting a range of technologies.
CMP customers will have access to TriQuint’s latest commercial foundry process, TQP15, for cost-
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