news digest ♦ Novel Devices
In the future, the researchers hope to apply this growth method to other III-V nanowires to control phase purity.
Further details of this work are published in the paper “Control of the crystal structure of InAs nanowires by tuning contributions of adatom diffusion”, by Hui Huang, Xiaomin Ren, Xian Ye, Jingwei Guo, Qi Wang, Xia Zhang, Shiwei Cai and Yongqing Huang, Nanotechnology 21 (2010) 475602.
US Research Center Orders Aixtron tool For Graphene Growth
The Aixtron VP508GFR system proven in similar research projects will be used to grow epitaxial SiC and convert the grown SiC material into mono- layers of Graphene.
Aixtron SE has a new order for a silicon carbide (SiC) chemical vapor deposition (CVD) system from a major corporate research & development center located in the northeast of the USA.
The order comprises a VP508GFR 1x4-inch wafer configuration Hot-Wall reactor system with additional features including a Dual Tube Hot-Wall reactor with the Aixtron patented Gas Foil Rotation for individual wafer uniformity and high temperature capability.
The company placed the order during the third quarter of 2010. Following delivery in the second quarter of 2011, the local Aixtron support team will carry out the installation and commissioning.
Frank Wischmeyer, VP and Managing Director Aixtron AB, comments, “Against the backdrop of the Nobel Prize for Physics awarded to Andre Geim and Konstantin Novoselov for Graphene, this is good timing for our forthcoming delivery. Graphene is an exciting material which possesses high electron mobility, making it a potential candidate as the channel material in future high frequency devices and integrated circuits.”
The Aixtron VP508GFR system proven in similar research projects will be used to grow epitaxial
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SiC and convert the grown SiC material into mono- layers of Graphene.
For R&D and medium scale production, Aixtron´s VP508GFR Hot-Wall tube reactor offers single wafer 4-inch and optional 6-inch capacity in a dual chamber configuration for enhanced productivity.
Aixtron also offers production based MOCVD platforms using its planetary type MOCVD reactors with high temperature capability for epitaxial SiC growth for 4- and 6-inch capability.
Tektronix Component Solutions Are “Ready for IBM Technology”
The firm has received validation for its innovative SiGe 100 & 200 GHz processes.
Tektronix Component Solutions says that its ASIC design and custom IC packaging services are now validated by IBM Corporation as “Ready for IBM Technology” on silicon germanium (SiGe) 5HP, 7HP, 7WL, and 8HP process technologies.
Receiving this validation demonstrates that Tektronix Component Solutions offers customers the expertise, value and reliability required for high- performance SiGe devices.
“We’ve worked with IBM’s process for 15 years, designing and packaging over 30 SiGe ASICs across multiple technology nodes,” said Tom Buzak, president, Tektronix Component Solutions. “The validation from IBM is a significant benchmark for Tektronix Component Solutions’ ASIC design and IC packaging services.”
The “Ready for IBM Technology” program is a collaborative ecosystem of companies that enables IBM to complement its semiconductor capabilities and provide complete foundry solutions to clients. This ecosystem helps IBM ‘s foundry customers speed time-to-market, reduce development risk, lower development costs, and improve return on investment by identifying IP, design and manufacturing solutions and services that have been tested and validated for compatibility with IBM Foundry technologies.
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