news digest ♦ Power Electronics
The SiC MIDSJT devices developed in this program will be used to construct motor control power modules for direct integration with Venus exploration rovers.
“We are pleased with the confidence expressed by NASA in our high temperature SiC device solutions. This project will enable GeneSiC to develop industry-leading SiC-based power management technologies through its innovative device and packaging solutions” said Siddarth Sundaresan, GeneSiC’s Director of Technology.
“The SiC MIDSJT devices targeted in this program will allow Kilowatt-level power to be handled with digital precision at temperatures as high as 500 °C. In addition to outer space applications, this novel technology has the potential to revolutionize critical aerospace and geothermal oil drilling hardware requiring ambient temperatures in excess of 200 °C. These application areas are currently limited by the poor high-temperature performance of contemporary Silicon and even SiC based device technologies such as JFETs and MOSFETs” he added.
GeneSiC continues to rapidly enhance the equipment and personnel infrastructure at its Dulles, Virginia facility. The company is aggressively hiring personnel experienced in compound semiconductor device fabrication, semiconductor testing and detector designs.
GeneSiC Semiconductor develops Silicon Carbide (SiC) based semiconductor devices for high temperature, radiation, and power grid applications. This includes development of rectifiers, FETs, bipolar devices as well as particle & photonic detectors. GeneSiC has access to an extensive suite of semiconductor design, fabrication, characterization and testing facilities for such devices.
GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers. The company distinguishes itself by providing high quality products that are specifically tuned to each customer’s requirements. GeneSiC has prime/sub-contracts from major US Government agencies including ARPA-E, US Dept of Energy, Navy, DARPA, Dept of Homeland Security, Dept of Commerce and other departments within the US
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www.compoundsemiconductor.net January / February 2011 Dept. of Defense.
Cree Reveals 650V Silicon Carbide Schottky Diode Family
The firm’s new product line of Z-Rec 650V Junction Barrier Schottky (JBS) diodes should improve advanced high-efficiency data center power supply designs.
Targeting the latest data center power supply requirements, Cree, a market leader in silicon carbide power devices, is introducing its new line of Z-Rec 650V Junction Barrier Schottky (JBS) diodes.
The new JBS diodes provide blocking voltage to 650V to accommodate recent changes in data center power architecture that industry consultants estimate will result in energy efficiency gains of up to 5 percent. Because data centers account for nearly 10 percent of the world’s annual consumption of electrical power, any efficiency gain represents a significant opportunity to reduce overall power consumption.
Conventional switch-mode power supplies typically have an input voltage range of 90V – 264V, supporting various AC input sources worldwide. In existing data center power architectures, 3-phase/480V power is supplied from the local utility. This 3 phase/480V power is converted to 3 phase/208V by means of a power transformer and then further conditioned to provide input power to the server power supply. This conversion step reduces overall efficiency due to transformer losses.
Recent trends in data center power architecture call for the elimination of the 480V to 208V conversion to boost overall data center efficiency. Instead of
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